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dc.contributor.authorCascales, Juan Pedro
dc.contributor.authorSambricio, J. L.
dc.contributor.authorHerranz, D.
dc.contributor.authorEbels, U.
dc.contributor.authorKatine, J.A.
dc.contributor.authorAliev Kazanski, Farkhad 
dc.contributor.otherUAM. Departamento de Física de la Materia Condensadaes_ES
dc.date.accessioned2014-10-06T11:58:24Z
dc.date.available2014-10-06T11:58:24Z
dc.date.issued2013-03-06
dc.identifier.citationApplied Physics Letters 102.9 (2013): 092404en_US
dc.identifier.issn0003-6951 (print)es_ES
dc.identifier.issn1077-3118 (online)es_ES
dc.identifier.urihttp://hdl.handle.net/10486/662070
dc.descriptionThe following article appeared in Applied Physics Letters 102.9 (2013): 092404 and may be found at http://scitation.aip.org/content/aip/journal/apl/102/9/10.1063/1.4794537en_US
dc.description.abstractWe report on room temperature magnetoresistance and low frequency noise in sub-100 nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9 nm) barriers. For magnetic fields applied along the hard axis, we observe current induced magnetization switching between the antiparallel and parallel alignments at dc current densities as low as 4 × 106 A/cm2. We attribute the low value of the critical current to the influence of localized reductions in the tunnel barrier, which affects the current distribution. The analysis of random telegraph noise, which appears in the field interval near a magnetization switch, provides an estimate to the dimension of the pseudo pinholes that trigger the magnetization switching via local spin torque. Micromagnetic simulations qualitatively and quantitatively reproduce the main experimental observationsen_US
dc.description.sponsorshipThis work has been supported by the Spanish MINECO (MAT2012-32743, CONSOLIDER CSD2007-00010) and Comunidad de Madrid (P2009/MAT-1726) grants, as well as by the French National Research Agency ANR (MILESTONE ANR-09-NANO-037).en_US
dc.format.extent4 pag.es_ES
dc.format.mimetypeapplication/pdfen
dc.language.isoengen
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rights© 2013 American Institute of Physicsen_US
dc.subject.otherMagnetic tunnel junctionsen_US
dc.subject.otherElectrodesen_US
dc.subject.otherMagnetization reversalsen_US
dc.subject.otherCurrent densityes_ES
dc.subject.otherTorqueen_US
dc.titleMagnetization reversal in sub-100 nm magnetic tunnel junctions with ultrathin MgO barrier biased along the hard axisen_US
dc.typearticleen
dc.subject.ecienciaFísicaes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.4794537es_ES
dc.identifier.doi10.1063/1.4794537es_ES
dc.identifier.publicationfirstpage092404es_ES
dc.identifier.publicationissue9es_ES
dc.identifier.publicationlastpage092404-4es_ES
dc.identifier.publicationvolume102es_ES
dc.relation.projectIDComunidad de Madrid. S2009/MAT-1726/NANOBIOMAGNETen_US
dc.type.versioninfo:eu-repo/semantics/publishedVersiones_ES
dc.rights.accessRightsopenAccessen
dc.authorUAMAliev Kazanski, Farkhad (259032)
dc.facultadUAMFacultad de Ciencias


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