dc.contributor.author | Nichterwitz, Melanie | |
dc.contributor.author | Caballero, Raquel | |
dc.contributor.author | Kaufmann, Christian Alexander | |
dc.contributor.author | Schock, Hans Werner | |
dc.contributor.author | Unold, Thomas | |
dc.contributor.other | UAM. Departamento de Física Aplicada | es_ES |
dc.date.accessioned | 2014-10-20T08:13:40Z | |
dc.date.available | 2014-10-20T08:13:40Z | |
dc.date.issued | 2013-01-28 | |
dc.identifier.citation | Journal of Applied Physics 113.4 (2013): 044515 | en_US |
dc.identifier.issn | 0021-8979 (print) | es_ES |
dc.identifier.issn | 1089-7550 (online) | es_ES |
dc.identifier.uri | http://hdl.handle.net/10486/662192 | |
dc.description | The following article appeared in Journal of Applied Physics 113.4 (2013): 044515 and may be found at http://scitation.aip.org/content/aip/journal/jap/113/4/10.1063/1.4788827 | en_US |
dc.description.abstract | Cross section electron-beam induced current (EBIC) and illumination- dependent current voltage (IV) measurements show that charge carrier transport in Cu(In,Ga)Se2 (CIGSe)/CdS/ZnO solar-cells is generation-dependent. We perform a detailed analysis of CIGSe solar cells with different CdS layer thicknesses and varying Ga-content in the absorber layer. In conjunction with numerical simulations, EBIC and IV data are used to develop a consistent model for charge and defect distributions with a focus on the heterojunction region. The best model to explain our experimental data is based on a p+ layer at the CIGSe/CdS interface leading to generation-dependent transport in EBIC at room temperature. Acceptor-type defect states at the CdS/ZnO interface cause a significant reduction of the photocurrent in the red-light illuminated IV characteristics at low temperatures (red kink effect). Shallow donor-type defect states at the p+ layer/CdS interface of some grains of the absorber layer are responsible for grain specific, i.e., spatially inhomogeneous, charge carrier transport observed in EBIC. | en_US |
dc.description.sponsorship | | es_ES |
dc.format.extent | 16 pag. | es_ES |
dc.format.mimetype | application/pdf | en |
dc.language.iso | eng | en |
dc.publisher | American Institute of Physics. | en_US |
dc.relation.ispartof | Journal of Applied Physics | en_US |
dc.rights | © 2013 American Institute of Physics. | en_US |
dc.subject.other | Solar cells | en_US |
dc.subject.other | II-VI semiconductors | en_US |
dc.subject.other | Band models | en_US |
dc.subject.other | Conductions bands | en_US |
dc.subject.other | Carrier generation | en_US |
dc.title | Generation-dependent charge carrier transport in Cu(In,Ga)Se 2/CdS/ZnO thin-film solar-cells | en_US |
dc.type | article | en |
dc.subject.eciencia | Física | es_ES |
dc.relation.publisherversion | http://dx.doi.org/10.1063/1.4788827 | es_ES |
dc.identifier.doi | 10.1063/1.4788827 | es_ES |
dc.identifier.publicationfirstpage | 044515 | es_ES |
dc.identifier.publicationissue | 4 | es_ES |
dc.identifier.publicationlastpage | undefined | es_ES |
dc.identifier.publicationvolume | 113 | es_ES |
dc.type.version | info:eu-repo/semantics/publishedVersion | es_ES |
dc.rights.accessRights | openAccess | en |
dc.authorUAM | Caballero Mesa, Ana Raquel (264645) | |
dc.facultadUAM | Facultad de Ciencias | |