dc.contributor.author | Jiménez-Rey, David | |
dc.contributor.author | Peña-Rodríguez, Ovidio | |
dc.contributor.author | Manzano-Santamaría, Javier | |
dc.contributor.author | Olivares, José | |
dc.contributor.author | Muñoz-Martín, Angel | |
dc.contributor.author | Rivera, Antonio C. | |
dc.contributor.author | Agulló López, Fernando | |
dc.contributor.other | UAM. Departamento de Física de Materiales | es_ES |
dc.date.accessioned | 2015-04-29T10:56:10Z | |
dc.date.available | 2015-04-29T10:56:10Z | |
dc.date.issued | 2012-09-01 | |
dc.identifier.citation | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 286 (2012): 282-286 | en_US |
dc.identifier.issn | 0168-583X (Print) | es_ES |
dc.identifier.uri | http://hdl.handle.net/10486/665632 | |
dc.description.abstract | Ionoluminescence (IL) of the two SiO 2 phases, amorphous silica and crystalline quartz, has been comparatively investigated in this work, in order to learn about the structural defects generated by means of ion irradiation and the role of crystalline order on the damage processes. Irradiations have been performed with Cl at 10 MeV and Br at 15 MeV, corresponding to the electronic stopping regime (i.e., where the electronic stopping power S e is dominant) and well above the amorphization threshold. The light-emission kinetics for the two main emission bands, located at 1.9 eV (652 nm) and 2.7 eV (459 nm), has been measured under the same ion irradiation conditions as a function of fluence for both, silica and quartz. The role of electronic stopping power has been also investigated and discussed within current views for electronic damage. Our experiments provide a rich phenomenological background that should help to elucidate the mechanisms responsible for light emission and defect creation | en_US |
dc.description.sponsorship | This work has been supported by Spanish Ministry MICINN through the project MAT-2008-06794-C03-03, JCI-2009-05681, and by Madrid Community through the project TECHNOFUSION (S2009/ENE-1679). OPR is grateful to CONACyT, Mexico, for extending a postdoctoral fellowship | en_US |
dc.format.extent | 18 pag. | es_ES |
dc.format.mimetype | application/pdf | es_ES |
dc.language.iso | eng | en |
dc.publisher | Elsevier B.V. | en_US |
dc.relation.ispartof | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | en_US |
dc.rights | © 2011 Elsevier B.V. All rights reserved | en_US |
dc.subject.other | Ion damage | en_US |
dc.subject.other | Ion irradiation | en_US |
dc.subject.other | Quartz | en_US |
dc.subject.other | Silica | en_US |
dc.subject.other | SiO 2 | en_US |
dc.subject.other | Swift heavy ions | en_US |
dc.title | Ionoluminescence induced by swift heavy ions in silica and quartz: A comparative analysis | en_US |
dc.type | article | en |
dc.subject.eciencia | Física | es_ES |
dc.relation.publisherversion | http://dx.doi.org/10.1016/j.nimb.2011.12.025 | es_ES |
dc.identifier.doi | 10.1016/j.nimb.2011.12.025 | es_ES |
dc.identifier.publicationfirstpage | 282 | es_ES |
dc.identifier.publicationlastpage | 286 | es_ES |
dc.identifier.publicationvolume | 286 | es_ES |
dc.relation.projectID | Comunidad de Madrid. S2009/ENE-1679/TECHNOFUSION | es_ES |
dc.type.version | info:eu-repo/semantics/acceptedVersion | en |
dc.rights.cc | Reconocimiento – NoComercial – SinObraDerivada | es_ES |
dc.rights.accessRights | openAccess | en |
dc.authorUAM | Agullo López, Fernando (258914) | |
dc.facultadUAM | Facultad de Ciencias | |
dc.institutoUAM | Centro de Micro-Análisis de Materiales (CMAM) | |