Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves
Entity
UAM. Departamento de Física de MaterialesPublisher
American Institute of Physics Inc.Date
2015-09-01Citation
10.1063/1.4932147
AIP Advances 5.09 (2015): 097217
ISSN
2158-3226 (online)DOI
10.1063/1.4932147Funded by
acknowledges the Spanish MINECO FPI (RyC-2011-09528) grant. Financial support from the Spanish MINECO (contracts MAT2011-22997 andMAT2014-53119-C2-1-R) and the CAM (contract S2009/ESP-1503) is gratefully acknowledgedProject
Gobierno de España. RyC-2011-09528; Gobierno de España. MAT2011-22997; Gobierno de España. MAT2014-53119-C2-1-R; Comunidad de Madrid. S2009/ESP-1503/Q&CLIGHTEditor's Version
http://dx.doi.org/10.1063/1.4932147Subjects
Acoustic waves; Light emission; Nanowires; FísicaRights
© 2015 Author(s)Abstract
The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ∼330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors
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Google Scholar:Lazic, Snezana
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Chernysheva, E.
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Gačević
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Van Der Meulen, Herko Piet
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Calleja, E.
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Calleja Pardo, J. M.
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