dc.contributor.author | Sousa, Marco A. | |
dc.contributor.author | Esteves, Teresa C. | |
dc.contributor.author | Sedrine, Nabiha Ben | |
dc.contributor.author | Rodrigues, Joana | |
dc.contributor.author | Lourenço, Márcio B. | |
dc.contributor.author | Redondo Cubero, Andrés | |
dc.contributor.author | Alves, Eduardo | |
dc.contributor.author | O'Donnell, Kevin P. | |
dc.contributor.author | Bockowski, Michal | |
dc.contributor.author | Wetzel, Christian | |
dc.contributor.author | Correia, Maria R. | |
dc.contributor.author | Lorenz, Katharina | |
dc.contributor.author | Monteiro, Teresa | |
dc.contributor.other | UAM. Departamento de Física Aplicada | es_ES |
dc.date.accessioned | 2016-09-12T11:27:39Z | |
dc.date.available | 2016-09-12T11:27:39Z | |
dc.date.issued | 2015-04-13 | |
dc.identifier.citation | Scientific Reports 5 (2015): 9703 | en_US |
dc.identifier.issn | 2045-2322 | es_ES |
dc.identifier.uri | http://hdl.handle.net/10486/672893 | |
dc.description.abstract | We studied the optical properties of metalorganic chemical vapour deposited (MOCVD) InGaN/GaN multiple quantum wells (MQW) subjected to nitrogen (N) implantation and post-growth annealing
treatments. The optical characterization was carried out by means of temperature and excitation density-dependent steady state photoluminescence (PL) spectroscopy, supplemented by room temperatura PL excitation (PLE) and PL lifetime (PLL) measurements. The as-grown and as-implanted samples were found to exhibit a single green emission band attributed to localized excitons in the QW, although the N implantation leads to a strong reduction of the PL intensity. The green band was found to be surprisingly stable on annealing up to 14006C. A broad blue band dominates the low temperature PL after termal annealing in both samples. This band is more intense for the implanted sample, suggesting that defects
generated by N implantation, likely related to the diffusion/segregation of indium (In), have been optically activated by the thermal treatment | en_US |
dc.description.sponsorship | The authors acknowledge FCT for the final funding from PEst-C/CTM/LA0025/2013-14, PTDC/CTM-NAN/2156/2012, PTDC/FIS-NAN/0973/2012 and RECI/FIS-NAN/0183/ 2012 (FCOMP-01-0124-FEDER-027494) projects. J. Rodrigues thanks FCT for her PhD grant, SFRH/BD/76300/2011. ARC acknowledges financial support under the ‘Juan de la Cierva’ program (MECO, Spain) through grant JCI-2012-14509. | en_US |
dc.format.extent | 6 pag. | en |
dc.format.mimetype | application/pdf | en |
dc.language.iso | eng | en |
dc.publisher | Nature Publishing Group | en_US |
dc.relation.ispartof | Scientific Reports | en_US |
dc.subject.other | Optical | en_US |
dc.subject.other | Photoluminescence | en_US |
dc.subject.other | Diffusion/segregation of indium | en_US |
dc.subject.other | Thermal treatment | en_US |
dc.title | Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen | en_US |
dc.type | article | en |
dc.subject.eciencia | Física | es_ES |
dc.relation.publisherversion | http://dx.doi.org/10.1038/srep09703 | es_ES |
dc.identifier.doi | 10.1038/srep09703 | es_ES |
dc.identifier.publicationfirstpage | 9703-1 | es_ES |
dc.identifier.publicationlastpage | 9703-6 | es_ES |
dc.identifier.publicationvolume | 5 | es_ES |
dc.type.version | info:eu-repo/semantics/publishedVersion | en |
dc.rights.cc | Reconocimiento | es_ES |
dc.rights.accessRights | openAccess | en |
dc.facultadUAM | Facultad de Ciencias | |