Ultrafast atomic diffusion inducing a reversible (2√3x2√3)R30º <--> (√3x√3)R30º transition on Sn/Si (111): B
Entity
UAM. Departamento de Física Teórica de la Materia CondensadaPublisher
American Physical SocietyDate
2015-05-13Citation
10.1103/PhysRevLett.114.196101
Physical Review Letters 114.19 (2015): 196101
ISSN
0031-9007 (print); 1079-7114 (online)DOI
10.1103/PhysRevLett.114.196101Funded by
This work was supported by the French Agence Nationale de la Recherche (ANR) under Contract SurMott, No. NT-09-618999, and by Spanish Ministerio de Economía y Competitividad, Project No. MAT2014-59966-RProject
Gobierno de España. MAT2014-59966-REditor's Version
http://dx.doi.org/10.1103/PhysRevLett.114.196101Subjects
Ground state; Quantum theory; Diffusive mechanisms; Dynamical phase transition; Quantum mechanical; Surface units; FísicaRights
©2015 American Physical SocietyAbstract
Dynamical phase transitions are a challenge to identify experimentally and describe theoretically. Here, we study a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit cell divides its area by a factor of 4 at 250°C. This phase transition is explained by the 24-fold degeneracy of the ground state and a novel diffusive mechanism, where four Sn atoms arranged in a snakelike cluster wiggle at the surface exploring collectively the different quantum mechanical ground states
Files in this item
Google Scholar:Srour, W.
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Trabada, Daniel G.
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Martínez, J. I.
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Flores Sintas, Fernando
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Ortega Mateo, José
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Abuín, M.
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Fagot-Revurat, Y.
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Kierren, B.
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Taleb-Ibrahimi, A.
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Malterre, D.
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Tejeda, A.
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