Transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

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dc.contributor.author Martinez, I.
dc.contributor.author Cascales, J. P.
dc.contributor.author Lara, A.
dc.contributor.author Andres, P.
dc.contributor.author Aliev, Farkhad G.
dc.contributor.author Farkhad, G.
dc.contributor.other UAM. Departamento de Física de la Materia Condensada es_ES
dc.date.accessioned 2017-01-30T14:59:40Z
dc.date.available 2017-01-30T14:59:40Z
dc.date.issued 2015-02-12
dc.identifier.citation Proceedings of SPIE - The International Society for Optical Engineering 9358 (2015): 93580O en_US
dc.identifier.issn 1996-756X (online) es_ES
dc.identifier.issn 0277-786X (print) es_ES
dc.identifier.uri http://hdl.handle.net/10486/676610
dc.description.abstract The time dependent transient lateral photovoltaic effect (T-LPE) has been studied with microsecond time resolution and with chopping frequencies in the kHz range, in lithographically patterned 21 nm thick, 5, 10 and 20 micron wide and 1500 micron long Co lines grown over naturally passivated p-type Si (100). We have observed a nearly linear dependence of the LPE transient response with the laser spot position. An unusual T-LPE dynamic response with a sign change in the laser-off stage has also been corroborated by numerical simulations. A qualitative explanation suggests a modification of the drift-diffusion model by including the influence of a local inductance. In addition, influence of anisotropic magnetoresistance of the Co line structure on dynamic response on T-LPE has been investigated. Specifically, we have experimentally investigated influence of the direction of the external magnetic field respect to the drift velocity of the photogenerated carriers on the T-LPE. We have observed notable dependence of the T-LPE on the magnetic field in the small field range (below 100 Oe), compatible with anisotropic magnetoresistance values. The strong influence of the magnetization alignment on the dynamic response of photogenerated carriers has been also observed through a phase sensitive lock-in experiment. These findings indicate that the microstructuring of the ferromagnetic line based position sensitive detectors (PSD) could improve their space-time resolution and add capability of magnetic field tuning of the main PSD characteristics en_US
dc.description.sponsorship We would like to acknowledge Jose Rodrigo and Laura Mart´ın for their help at the initial stage of the experiment as well as Ch. van Haesendonk for the growth of the samples and Arkadi Levanyuk for discussions. We also acknowledge the support by the Spanish MINECO (MAT2012-32743), and the Comunidad de Madrid through NANOFRONTMAG-CM (S2013/MIT-2850) and CCC-UAM (SVORTEX) en_US
dc.format.extent 14 pag. es_ES
dc.format.mimetype application/pdf en
dc.language.iso eng en
dc.publisher SPIE en_US
dc.relation.ispartof Proceedings of SPIE - The International Society for Optical Engineering en_US
dc.rights © 2015 SPIE en_US
dc.subject.other Lateral photovoltaic effect en_US
dc.subject.other Dynamic response en_US
dc.subject.other Lithographically patterned structures en_US
dc.subject.other Anisotropic Transient Lateral Photovoltaic effect en_US
dc.title Transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films en_US
dc.type article en
dc.subject.eciencia Física es_ES
dc.relation.publisherversion http://dx.doi.org/10.1117/12.2079071 es_ES
dc.identifier.doi 10.1117/12.2079071 es_ES
dc.identifier.publicationfirstpage 93580O es_ES
dc.identifier.publicationlastpage 93580O es_ES
dc.identifier.publicationvolume 9358 es_ES
dc.relation.projectID Gobierno de España. MAT2012-32743 es_ES
dc.relation.projectID Comunidad de Madrid. S2013/MIT-2850/NANOFRONTMAG-CM es_ES
dc.type.version info:eu-repo/semantics/publishedVersion en
dc.rights.accessRights openAccess en
dc.authorUAM Aliev Kazanski, Farkhad (259032)


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