Nonequilibrium plasmon emission drives ultrafast carrier relaxation dynamics in photoexcited graphene
Entity
UAM. Departamento de Física Teórica de la Materia CondensadaPublisher
American Physical SocietyDate
2016-01-11Citation
10.1103/PhysRevB.93.041408
Physical Review B - Condensed Matter and Materials Physics 93.4 (2016): 041408
ISSN
1098-0121 (print); 1550-235X (online)DOI
10.1103/PhysRevB.93.041408Funded by
This work has been funded by the Engineering and Physical Sciences Research Council (United Kingdom), the Leverhulme Trust (United Kingdom), the European Research Council (ERC- 2011-AdG Proposal No. 290981) and the Spanish MINECO (Grant No. MAT2011-28581-C02-01)Project
info:eu-repo/grantAgreement/EC/FP7/290981; Gobierno de España. MAT2011-28581-C02-01Editor's Version
http://dx.doi.org/10.1103/PhysRevB.93.041408Subjects
Photoexcited Graphene; FísicaRights
© 2016 American Physical SocietyAbstract
The fast decay of carrier inversion in photoexcited graphene has been attributed to optical phonon emission and Auger recombination. Plasmon emission provides another pathway that, as we show here, drives the carrier relaxation dynamics on ultrafast time scales. In studying the nonequilibrium relaxation dynamics we find that plasmon emission effectively converts inversion into hot carriers, whose energy is then extracted by optical phonon emission. This mechanism not only explains the observed femtosecond lifetime of inversion but also offers the prospect for atomically thin ultrafast plasmon emitters
Files in this item
Google Scholar:Hamm, Joachim
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Page, A. Freddie
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Bravo Abad, Jorge
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García Vidal, Fco. José
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Hess, Ortwin G
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