Impact of Mg content on native point defects in MgxZn1-xO (0 ≤ x ≤ 0.56)

Biblos-e Archivo/Manakin Repository

Show simple item record

dc.contributor.author Perkins, J.
dc.contributor.author Foster, G. M.
dc.contributor.author Myer, M.
dc.contributor.author Mehra, S.
dc.contributor.author Chauveau, J. M.
dc.contributor.author Hierro, A.
dc.contributor.author Redondo-Cubero, A.
dc.contributor.author Windl, W.
dc.contributor.author Brillson, L.J.
dc.contributor.other UAM. Departamento de Física Aplicada es_ES
dc.date.accessioned 2017-04-26T14:42:13Z
dc.date.available 2017-04-26T14:42:13Z
dc.date.issued 2015-06-01
dc.identifier.citation APL Materials 3.6 (2015): 062801 en_US
dc.identifier.issn 2166-532X (online) es_ES
dc.identifier.uri http://hdl.handle.net/10486/678034
dc.description.abstract We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the densities, energy levels, and spatial distributions of zinc/magnesium cation and oxygen vacancies in isostructural, single-phase, non-polar MgxZn1-xO alloys over a wide (0 ≤ x ≤ 0.56) range. Within this wide range, both defect types exhibit strong Mg content-dependent surface segregation and pronounced bulk density minima corresponding to unit cell volume minima, which can inhibit defect formation due to electrostatic repulsion. Mg in ZnO significantly reduces native defect densities and their non-polar surface segregation, both major factors in carrier transport and doping of these oxide semiconductors en_US
dc.description.sponsorship The authors gratefully acknowledge National Science Foundation, Grant No. DMR-1305193 (Charles Ying and HaiyanWang), for support of this work.W.W. acknowledges partial funding from the Center for Emergent Materials, an NSF MRSEC (DMR 1420451) and AFOSR, Award # FA9550-14-1-0322. A.R.-C. acknowledges Juan de la Cierva program under Contract No. JCI-2012-14509 (Spain) en_US
dc.format.extent 6 pag. es_ES
dc.format.mimetype application/pdf en
dc.language.iso eng en
dc.publisher American Institute of Physics Inc. en_US
dc.relation.ispartof APL Materials en_US
dc.rights © 2015 Author(s) en_US
dc.subject.other Mg content en_US
dc.subject.other Native point defects en_US
dc.title Impact of Mg content on native point defects in MgxZn1-xO (0 ≤ x ≤ 0.56) en_US
dc.type article en
dc.subject.eciencia Física es_ES
dc.relation.publisherversion http://dx.doi.org/10.1063/1.4915491 es_ES
dc.identifier.doi 10.1063/1.4915491 es_ES
dc.identifier.publicationfirstpage 062801 es_ES
dc.identifier.publicationissue 6 es_ES
dc.identifier.publicationlastpage 062801 es_ES
dc.identifier.publicationvolume 3 es_ES
dc.relation.projectID Gobierno de España. JCI-2012-14509 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion en
dc.rights.accessRights openAccess en


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record