Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction

Biblos-e Archivo/Manakin Repository

Show simple item record Carvalho, Daniel Müller-Caspary, Knut Schowalter, Marco Grieb, Tim Mehrtens, Thorsten Rosenauer, Andreas Ben, Teresa García, Rafael Redondo-Cubero, Andrés Lorenz, Katharina Daudin, Bruno Morales, Francisco M.
dc.contributor.other UAM. Departamento de Física Aplicada es_ES 2017-08-25T08:00:12Z 2017-08-25T08:00:12Z 2016-06-28
dc.identifier.citation Scientific Reports 6 (2016): 28459 en_US
dc.identifier.issn 2045-2322 (online) es_ES
dc.description.abstract The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning transmission electron microscopy mode has been used to simultaneously measure the strain state and the induced piezoelectric fields in a GaN/AlN multiple quantum well system en_US
dc.description.sponsorship The authors thank the FEI company for the EDX measurements and HR-BF-STEM data. This work was supported by the MAT2010-15206 (CICYT, Spain), EU-COST Action MP0805, and P09-TEP-5403 (Junta de Andalucía with EU-FEDER participation). We acknowledge support by FCT Portugal (PTDC/FIS NAN/0973/2012, SFRH/BPD/74095/2010, Investigador FCT), and Juan de la Cierva program (JCI-2012-14509). K.M. acknowledges support from the Deutsche Forschungsgemeinschaft (DFG) under contract No. MU 3660/1-1. T.G: acknowledges support from DFG (R02051/11-1) en_US
dc.format.extent 9 pag. es_ES
dc.format.mimetype application/pdf en
dc.language.iso eng en
dc.publisher Nature Publishing Group en_US
dc.relation.ispartof Scientific Reports en_US
dc.rights © 2016, The Author(s) en_US
dc.subject.other Electron diffraction en_US
dc.subject.other Polarization en_US
dc.subject.other Scanning transmission electron microscopy en_US
dc.title Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction en_US
dc.type article en
dc.subject.eciencia Física es_ES
dc.relation.publisherversion es_ES
dc.identifier.doi 10.1038/srep28459 es_ES
dc.identifier.publicationfirstpage 28459 es_ES
dc.identifier.publicationlastpage 28459 es_ES
dc.identifier.publicationvolume 6 es_ES
dc.relation.projectID Gobierno de España. MAT2010-15206 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion en Reconocimiento es_ES
dc.rights.accessRights openAccess en

Files in this item


This item appears in the following Collection(s)

Show simple item record