Strong modulation of optical properties in rippled 2D GaSe via strain engineering
Entity
UAM. Departamento de Física de la Materia CondensadaPublisher
Institute of Physics Publishing Ltd.Date
2019-03-26Citation
10.1088/1361-6528/ab0bc1
Nanotechnology 30.24 (2019): 24LT01
ISSN
1361-6528 (online); 0957-4484 (print)DOI
10.1088/1361-6528/ab0bc1Funded by
Research supported by the Spanish MINECO through Grants MAT2017–88693-R, MAT2014-57915-R, FIS2016-80434- P (AEI/FEDER, EU), BES-2015-071316, the Ramón y Cajal programme RYC-2011-09345, the Fundación Ramón Areces and the María de Maeztu Programme for Units of Excellence in R&D (MDM-2014-0377), as well as from the Comunidad Autónoma de Madrid (CAM) MAD2D-CM Program (S2013/MIT-3007) and the European Union Seventh Framework Programme under grant agreement No. 604391 Graphene Flagship. JJP acknowledges Fulbright Fellowship for Sabbatical leave at University of Texas at Austin, EEUU. We acknowledge the computer resources and assistance provided by the Centro de Computación Científica of the Universidad Autónoma de MadridProject
Gobierno de España. MAT2017–88693-R; Gobierno de España. MAT2014-57915-R; Gobierno de España. FIS2016-80434- P; Gobierno de España. MDM-2014-0377; Comunidad de Madrid. S2013/MIT-3007/MAD2D-CM; info:eu-repo/grantAgreement/EC/FP7/604391Editor's Version
https://doi.org/10.1088/1361-6528/ab0bc1Subjects
Two-dimensional materials; Band gap modulation; Gallium selenide (GaSe); Optical absorption; Strain engineering; FísicaNote
This is the Accepted Manuscript version of an article accepted for publication in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6528/ab0bc1Rights
© 2019 IOP Publishing Ltd.Abstract
Few-layer GaSe is one of the latest additions to the family of two-dimensional semiconducting crystals whose properties under strain are still relatively unexplored. Here, we study rippled nanosheets that exhibit a periodic compressive and tensile strain of up to 5%. The strain profile modifies the local optoelectronic properties of the alternating compressive and tensile regions, which translates into a remarkable shift of the optical absorption band-edge of up to 1.2 eV between crests and valleys. Our experimental observations are supported by theoretical results from density functional theory calculations performed for monolayers and multilayers (up to seven layers) under tensile and compressive strain. This large band gap tunability can be explained through a combined analysis of the elastic response of Ga atoms to strain and the symmetry of the wave functions
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Google Scholar:Maeso, David
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Pakdel, Sahar
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Santos, Hernán
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Agrait de la Puente, Mario Nicolás
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Palacios Burgos, Juan José
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Prada, Elsa
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Rubio Bollinger, Gabino
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