Magnetization reversal mechanisms in Fe/NiO bilayers grown onto nanoporous alumina membranes and Si wafers
Entity
UAM. Departamento de Física AplicadaPublisher
A I P Publishing LLCDate
2020-01-01Citation
10.1063/1.5130172
AIP Advances 10.1 (2020): 015113
ISSN
2158-3226DOI
10.1063/1.5130172Funded by
The authors acknowledge the financial support from the Spanish Ministry of Economy and Competitiveness and the Spanish Research Agency under grant no. MAT2016-80394-RProject
Gobierno de España. MAT2016-80394-REditor's Version
https://doi.org/10.1063/1.5130172Subjects
Magnetization reversal; Pulsed laser ablation; Magnetron sputtering; FísicaRights
© 2020 Author(s)Abstract
We report on the magnetization reversal measured in two ferromagnetic/antiferromagnetic (F/AF) bilayer series: Fe/NiO/Al2O3 (nanoporous membranes, series N) and Fe/NiO/Si (wafers, series W). The Fe and NiO layers were deposited by pulsed laser ablation and magnetron sputtering, respectively. In both series different oxygen partial pressures were implemented in the Ar plasma during the NiO growth. The morphologies of both series (as imaged by atomic force microscopy) reflect those of their substrates and, particularly, the series N samples exhibit a six-fold columnar growth around each one of the membranes nanopores. The in-plane hysteresis loops measured upon field cooling the samples down to different temperatures in the range from 50 K up to 290 K evidenced i) 50 K, 0% oxygen coercivities that decreased markedly in both series samples with the increase of the Fe layer thickness (particularly the Fe 5 nm, series N sample exhibited a coercivity larger than the Fe magneto-crystalline anisotropy field), ii) a decrease of the coercivity with the increase of the NiO deposition oxygen partial pressure, observed in both series independently of the Fe layer thickness, iii) low temperature coercivities larger in the series N samples than in the series W ones. Our data are analyzed in correlation to the deposits morphology and in terms of the occurrence of either propagation mediated reversal (collective mode linked to spatially averaged interactions at the F/AF interface) or localized switching (defect ruled mechanism taking place in a spatially confined environment). It is concluded that i) the magnetization reversal mechanism active in series W samples corresponds to a weak pinning regime propagation of walls interacting with uncompensated moments at the F/AF interface, ii) in series N samples, the magnetization reversal does not involve propagation, and iii) in the latter series the reversal events are spatially restricted to the dot-like tops of the NiO columns surrounding the membrane pores
Files in this item
Google Scholar:Navarro, Enrique
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Alonso, María
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Ruiz, Ana
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Urdiroz, Unai
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Sánchez-Agudo, Marta
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Cebollada, Federico
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Domíguez-Cañizares, Guillermo
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Soriano Guillén, Leandro
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Gutierrez, Alejandro
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Palomares, F. Javier
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González, Jesús M.
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