Growth of GaP1-x-yAsyNx on Si substrates by chemical beam epitaxy
Entity
UAM. Departamento de Física AplicadaPublisher
American Institute of PhysicsDate
2019-09-10Citation
10.1063/1.5111090
Journal of Applied Physics 126.10 (2019): 105704
ISSN
0021-8979 (print); 1089-7550 (online)DOI
10.1063/1.5111090Project
Gobierno de España. TEC2016-78433-R; info:eu-repo/grantAgreement/EC/H2020/758885/EU//4SUNSEditor's Version
https://doi.org/10.1063/1.5111090Subjects
III-V Semiconductors; Gallium Arsenides; Semiconductor Quantum Wells; FísicaNote
The following article appeared in Journal of Applied Physics 126.10 (2019): 105704 and may be found at https://aip.scitation.org/doi/full/10.1063/1.5111090Rights
© 2019 Author(s)Abstract
Chemical beam epitaxy has been used to grow layers of GaP1-xNx, GaP1-yAsy, and nearly lattice-matched layers GaP1-x-yAsyNx on Si substrates. To address the issue of antiphase domain generation associated with the growth of polar semiconductors on Si, misoriented Si(001) substrates have been used combined with a carefully designed GaP buffer layer growth. The reflection high-energy electron diffraction pattern exhibits a (2 × 4) surface reconstruction after GaP buffer layer and GaP(As,N) graded layer growth, indicating the good surface quality and planarity of the grown layers. Sample composition was obtained by simultaneous acquisition of Rutherford backscattering spectrometry and nuclear reaction analysis, indicating a linear dependence of N and As mole fractions on the flux of their respective precursor. GaP1-x-yAsyNx layers grown on Si substrates have a lattice mismatch not larger than ±0.005 for N contents in the range 0.02 < x < 0.05. High-resolution X-ray diffraction reciprocal space maps demonstrate a good crystalline quality. Intense photoluminescence spectra have been measured in all GaP1-xNx and GaP1-x-yAsyNx layers, as it is expected for direct bandgap materials. Two wide overlapped emission peaks are observed in all the spectra, most likely related to near bandgap recombination. The position of the higher energy peak for GaP1-xNx and GaP1-x-yAsyNx layers has been compared to bandgap energy calculations using the band anticrossing model, showing good agreement
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Google Scholar:Ben Saddik, K.
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Braña de Cal, Alejandro Francisco
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López, N.
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Walukiewicz, W.
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García Carretero, Basilio Javier
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