Dynamics of a polariton condensate transistor switch
Entity
UAM. Departamento de Física de MaterialesPublisher
American Institute of PhysicsDate
2012-12-24Citation
10.1063/1.4773376
Applied Physics Letters 101.26 (2012): 261116
ISSN
0003-6951 (print)DOI
10.1063/1.4773376Funded by
The work was partially supported by the Spanish MEC MAT2011-22997, CAM (S-2009/ESP-1503), and FP7 ITN’s ‘‘Clermont4’’ (235114), “Spin-optronics” (237252), and INDEX (289968) projects.Project
info:eu-repo/grantAgreement/EC/FP7/235114; Comunidad de Madrid. S2009/ESP-1503/Q&CLIGHTEditor's Version
http://dx.doi.org/10.1063/1.4773376Subjects
Polaritons; Excitons; Transistors; Optical microcavities; Excitation energies; FísicaNote
The following article appeared in Applied Physics Letters 101,26 (2012): 261116 and may be found at http://scitation.aip.org/content/aip/journal/apl/101/26/10.1063/1.4773376Rights
© 2012 American Institute of PhysicsAbstract
We present a time-resolved study of the logical operation of a polariton condensate transistor switch. Creating a polariton condensate (source) in a GaAs ridge-shaped microcavity with a non-resonant pulsed laser beam, the polariton propagation towards a collector, at the ridge edge, is controlled by a second weak pulse (gate), located between the source and the collector. The experimental results are interpreted in the light of simulations based on the generalized Gross-Pitaevskii equation, including incoherent pumping, decay, and energy relaxation within the condensate.
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Google Scholar:Antón, C.
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Liew, T. C H
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Tosi, Guilherme
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Martín, Marta D.
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Gao, T.
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Hatzopoulos, Zacharias
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Eldridge, Peter S.
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Savvidis, Pavlos G.
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Viña Liste, Luis M.
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