Nonuniversality due to inhomogeneous stress in semiconductor surface nanopatterning by low-energy ion-beam irradiation
Entity
UAM. Departamento de Física AplicadaPublisher
American Physical SocietyDate
2015-04-13Citation
10.1103/PhysRevB.91.155303
Physical Review B - Condensed Matter and Materials Physics 91.15 (2015): 155303
ISSN
1098-0121 (print); 1537-744X (online)DOI
10.1103/PhysRevB.91.155303Funded by
This work has been partially supported by MICINN (Spain) Grant MAT2011-13333-E, and MINECO (Spain) Grants FIS2012-38866-C05-01, FIS2012-38866-C05-05, FIS2013-47949-C2-2-P and FIS2012-32349. TEM work has been conducted at LABMET laboratory, associated with Red de Laboratorios of CAM, Spain. A.M.-B. acknowledges support from MINECO, through FPI scolarship BES-2010-036179. A.R.C. acknowledges funding from Juan de la Cierva program (Spain) under Contract No. JCI-2012-14509Project
Gobierno de España. MAT2011-13333-E; Gobierno de España. FIS2012-38866-C05-01; Gobierno de España. FIS2012-38866-C05-05; Gobierno de España. FIS2013- 47949-C2-2-P; Gobierno de España. FIS2012-32349Editor's Version
http://dx.doi.org/10.1103/PhysRevB.91.155303Subjects
Semiconductor surfaces; Pattern formation process; Key factor; Molecular dynamics; Amorphous-crystalline interface; FísicaRights
© 2015 American Physical SocietyAbstract
A lack of universality with respect to ion species has been recently established in nanostructuring of semiconductor surfaces by low-energy ion-beam bombardment. This variability affects basic properties of the pattern formation process, like the critical incidence angle for pattern formation, and has remained unaccounted for. Here, we show that nonuniform generation of stress across the damaged amorphous layer induced by the irradiation is a key factor behind the range of experimental observations, as the form of the stress field
is controlled by the ion/target combination. This effect acts in synergy with the nontrivial evolution of the amorphous-crystalline interface. We reach these conclusions by contrasting a multiscale theoretical approach, which combines molecular dynamics and a continuum viscous flow model, with experiments using Xe+ and Ar+ ions on a Si(100) target. Our general approach can apply to a variety of semiconductor systems and conditions
Files in this item
Google Scholar:Moreno-Barrado, A.
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Castro, M.
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Gago, R.
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Vázquez, L.
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Muñoz-García, J.
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Redondo-Cubero, A.
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Galiana, B.
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Ballesteros, C.
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Cuerno, R.
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