Transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films
Entity
UAM. Departamento de Física de la Materia CondensadaPublisher
SPIEDate
2015-02-12Citation
10.1117/12.2079071
Proceedings of SPIE - The International Society for Optical Engineering 9358 (2015): 93580O
ISSN
1996-756X (online); 0277-786X (print)DOI
10.1117/12.2079071Funded by
We would like to acknowledge Jose Rodrigo and Laura Mart´ın for their help at the initial stage of the experiment as well as Ch. van Haesendonk for the growth of the samples and Arkadi Levanyuk for discussions. We also acknowledge the support by the Spanish MINECO (MAT2012-32743), and the Comunidad de Madrid through NANOFRONTMAG-CM (S2013/MIT-2850) and CCC-UAM (SVORTEX)Project
Gobierno de España. MAT2012-32743; Comunidad de Madrid. S2013/MIT-2850/NANOFRONTMAG-CMEditor's Version
http://dx.doi.org/10.1117/12.2079071Subjects
Lateral photovoltaic effect; Dynamic response; Lithographically patterned structures; Anisotropic Transient Lateral Photovoltaic effect; FísicaRights
© 2015 SPIEAbstract
The time dependent transient lateral photovoltaic effect (T-LPE) has been studied with microsecond time resolution and with chopping frequencies in the kHz range, in lithographically patterned 21 nm thick, 5, 10 and 20 micron wide and 1500 micron long Co lines grown over naturally passivated p-type Si (100). We have observed a nearly linear dependence of the LPE transient response with the laser spot position. An unusual T-LPE dynamic response with a sign change in the laser-off stage has also been corroborated by numerical simulations. A qualitative explanation suggests a modification of the drift-diffusion model by including the influence of a local inductance. In addition, influence of anisotropic magnetoresistance of the Co line structure on dynamic response on T-LPE has been investigated. Specifically, we have experimentally investigated influence of the direction of the external magnetic field respect to the drift velocity of the photogenerated carriers on the T-LPE. We have observed notable dependence of the T-LPE on the magnetic field in the small field range (below 100 Oe), compatible with anisotropic magnetoresistance values. The strong influence of the magnetization alignment on the dynamic response of photogenerated carriers has been also observed through a phase sensitive lock-in experiment. These findings indicate that the microstructuring of the ferromagnetic line based position sensitive detectors (PSD) could improve their space-time resolution and add capability of magnetic field tuning of the main PSD characteristics
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Google Scholar:Martinez, I.
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Cascales, J. P.
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Lara, A.
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Andres, P.
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Aliev Kazanski, Farkhad
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Farkhad, G.
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