Effect of a skin-deep surface zone on the formation of a two-dimensional electron gas at a semiconductor surface
Entity
UAM. Departamento de Física de la Materia CondensadaPublisher
American Physical SocietyDate
2016-09-12Citation
10.1103/PhysRevB.94.115305
Physical Review B - Condensed Matter and Materials Physics 94.11 (2016): 115305
ISSN
1098-0121 (print); 1550-235X (online)DOI
10.1103/PhysRevB.94.115305Funded by
We acknowledge financial support by Polish NCN (Contract 2011/03/B/ST3/02070). The research was carried out with the equipment purchased thanks to European Regional Development Fund in the framework of the Polish Innovation Economy Operational Program (Contract No. POIG.02.01.00- 12-023/08). L.W. and E.G.M. acknowledge financial support by MINECO (Grant MAT2014-52477-C5-5-P)Project
Gobierno de España. MAT2014-52477-C5-5-PEditor's Version
http://dx.doi.org/10.1103/PhysRevB.94.115305Subjects
Skin-deep surface; Electron gas; FísicaRights
© 2016 American Physical SocietyAbstract
Two-dimensional electron gases (2DEGs) at surfaces and interfaces of semiconductors are described straightforwardly with a one-dimensional (1D) self-consistent Poisson-Schrödinger scheme. However, their band energies have not been modeled correctly in this way. Using angle-resolved photoelectron spectroscopy we study the band structures of 2DEGs formed at sulfur-passivated surfaces of InAs(001) as a model system. Electronic properties of these surfaces are tuned by changing the S coverage, while keeping a high-quality interface, free of defects and with a constant doping density. In contrast to earlier studies we show that the Poisson-Schrödinger scheme predicts the 2DEG band energies correctly but it is indispensable to take into account the existence of the physical surface. The surface substantially influences the band energies beyond simple electrostatics, by setting nontrivial boundary conditions for 2DEG wave functions
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Google Scholar:Olszowska, Natalia
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Lis, Jakub
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Ciochon, Piotr
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Walczak, Lukasz
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García Michel, Enrique
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Kolodziej, Jacek J.
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