Low-frequency 1/f noise characteristics of ultra-thin AlOx-based resistive switching memory devices with magneto-resistive responses
Entity
UAM. Departamento de Física de la Materia CondensadaPublisher
MDPIDate
2021-10-16Citation
10.3390/electronics10202525
Electronics 10.20 (2021): 2525
ISSN
2079-9292DOI
10.3390/electronics10202525Project
Gobierno de España. RTI2018-095303-B-C55Editor's Version
https://doi.org/10.3390/electronics10202525Subjects
Hooge’s Parameter; Low-Frequency 1/F Noise; Magneto-Resistance (Mr); Magnetic Tunnel Junction (Mtj); Resistive Switching; FísicaRights
© 2021 by the authors Licensee MDPI, Basel, SwitzerlandFiles in this item
Google Scholar:Hong, JY.
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Chen, CY.
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Ling, DC.
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Martínez, I.
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González-Ruano, C.
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Aliev Kazanski, Farkhad
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