A growth diagram for chemical beam epitaxy of GaP1-xNx alloys on nominally (001)-oriented GaP-on-Si substrates
Entity
UAM. Departamento de Física AplicadaPublisher
American Institute of PhysicsDate
2021-12-06Citation
10.1063/5.0067209
APL Materials 9.12 (2021): 121101
ISSN
2166-532XDOI
10.1063/5.0067209Project
Gobierno de España. TEC2016-78433-R; Gobierno de España. PID2020-114280RB-I00Editor's Version
https://doi.org/10.1063/5.0067209Subjects
Dimethylhydrazine; Growth Diagrams; Lattice-Matched; Light-Emitting Device; Molefraction; Red Light; Si Substrates; Si-Technology; Single Phasis; Tertiarybutylphosphine; FísicaRights
© 2021 Author(s)Abstract
The compound GaP1-xNx is highly attractive to pseudomorphically integrate red-light emitting devices and photovoltaic cells with the standard Si technology because it is lattice matched to Si with a direct bandgap energy of ≈1.96 eV for x = 0.021. Here, we report on the chemical beam epitaxy of GaP1-xNx alloys on nominally (001)-oriented GaP-on-Si substrates. The incorporation of N into GaP1-xNx was systematically investigated as a function of growth temperature and the fluxes of the N and P precursors, 1,1-dimethylhydrazine (DMHy) and tertiarybutylphosphine (TBP), respectively. We found that the N mole fraction exhibits an Arrhenius behavior characterized by an activation energy of (0.79 ± 0.05) eV. With respect to the fluxes, we determined that the N mole fraction is linearly proportional to the flux of DMHy and inversely proportional to the one of TBP. All results are summarized in a universal equation that describes the dependence of x on the growth temperature and the fluxes of the group-V precursors. The results are further illustrated in a growth diagram that visualizes the variation of x as the growth temperature and the flux of DMHy are varied. This diagram also shows how to obtain single-phase and flat GaP1-xNx layers, as certain growth conditions result in chemically phase-separated layers with rough surface morphologies. Finally, our results demonstrate the feasibility of chemical beam epitaxy to obtain single-phase and flat GaP1-xNx layers with x up to about 0.04, a value well above the one required for the lattice-matched integration of GaP1-xNx-based devices on Si
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Google Scholar:Ben Saddik, Karim
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García Carretero, Basilio Javier
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Fernández Garrido, Sergio
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