Role of the metal supply pathway on silicon patterning by oblique ion beam sputtering

Abstract

The dynamics of the pattern induced on a silicon surface by oblique incidence of a 40 keV Fe ion beam is studied. The results are compared with those obtained for two reference systems, namely a noble gas ion beam either without or with Fe co-deposition. The techniques employed include Atomic Force Microscopy, Rutherford Backscattering Spectrometry, Transmission Electron Microscopy, X-ray Photoelectron and hard X-ray photoelectron spectroscopies, as well as Superconducting Quantum Interference Device measurements. The Fe-induced pattern differs from those of both reference systems since a pattern displaying short hexagonal ordering develops, although it shares some features with them. In both Fe systems a chemical pattern, with iron silicide-rich and -poor regions, is formed upon prolonged irradiation. The metal pathway has a marked influence on the patterns’ morphological properties and on the spatial correlation between the chemical and morphological patterns. It also determines the iron silicide stoichiometry and the surface pattern magnetic properties that are better for the Fe-implanted system. These results show that in ion-beam-induced silicon surface patterning with reactive metals, the metal supply pathway is critical to determine not only the morphological pattern properties, but also the chemical and magnetic ones