Mañana, JUEVES, 24 DE ABRIL, el sistema se apagará debido a tareas habituales de mantenimiento a partir de las 9 de la mañana. Lamentamos las molestias.
Electronic properties and 4f→ 5d transitions in Ce-doped Lu2SiO5: a theoretical investigation
Publisher
Royal Society of ChemistryDate
2012Citation
10.1039/C2JM31631E
Journal of Materials Chemistry 22 (2012): 13723-13731
ISSN
1364-5501DOI
10.1039/C2JM31631EEditor's Version
http://dx.doi.org/10.1039/C2JM31631ESubjects
Density-functional theory; QuímicaNote
This is an electronic version of an article published in Journal of Materials Chemistry. Ning, L., Lin, L., Li, L., Wu, C., Duan, C., Zhang, Y. and Luis Seijo. "Electronic properties and 4f 5d transitions in Ce-doped Lu2SiO5: a theoretical investigation". Journal of Materials Chemistry 22 (2012): 13723-13731Files in this item
Google Scholar:Ning, Lixin
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Lin, Lihua
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Li, Lanlan
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Wu, Changbao
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Duan, Chang-kui
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Zhang, Yongfan
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Seijo Loché, Luis Ignacio
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