On the true optical properties of zinc nitride
Publisher
American Institute of PhysicsDate
2011Citation
10.1063/1.3663859
Applied Physics Letters 99.23 (2011): 232112-3
ISSN
1077-3118DOI
10.1063/1.3663859Editor's Version
http://dx.doi.org/10.1063/1.3663859Subjects
Zinc oxide films; Ellipsometry; Rutherford backscattering; FísicaNote
Copyright (2011) American Institute of Physics. The following article appeared in Applied Physics Letters 99.23 (2011): 232112-3 and may be found at http://apl.aip.org/Files in this item

Google Scholar:García Núñez, C.
-
Pau, José Luis
-
Hernández, M. J.
-
Cervera Goy, Manuel
-
Piqueras, Juan
This item appears in the following Collection(s)
Related items
Showing items related by title, author, creator and subject.
-
Thin film transistors based on zinc nitride as a channel layer for optoelectronic devices
García Núñez, C.; Piqueras, Juan; Pau, José Luis; Ruíz, E.
2012-12-17