Low temperature ECR-PECVD microcristallyne SiC growth by pulsed gas flows
Date
2003Citation
[Poster] 10th International Conference on Silicon Carbide and Related Materials (ICSCRM'03) held on 2003 in Lyon (France)Subjects
Fisica; Silicon Carbide; Thin filmNote
This is an electronic version of the poster presented at the International conference on Silicon Carbide and related materials (ICSCRM'03) held in Lyon (France) on 2003The article of the poster appears in Madar, Roland; Camassel, Jean and Blanquet Elisabeth (eds.) Materials Science Forum. Silicon Carbide and Related Materials. Volumes 457-460 (2004): 309-312
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Google™ Scholar:Hernández, M.J.
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Cervera Goy, Manuel
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Piqueras, Juan
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Caño, T. del
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Jiménez, J.
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