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Low temperature ECR-PECVD microcristallyne SiC growth by pulsed gas flows

Author
Hernández, M.J.; Cervera Goy, Manueluntranslated; Piqueras, Juan; Caño, T. del; Jiménez, J.
Date
2003
Citation
[Poster] 10th International Conference on Silicon Carbide and Related Materials (ICSCRM'03) held on 2003 in Lyon (France)
 
 
 
Subjects
Fisica; Silicon Carbide; Thin film
URI
http://hdl.handle.net/10486/13960
Note
This is an electronic version of the poster presented at the International conference on Silicon Carbide and related materials (ICSCRM'03) held in Lyon (France) on 2003
The article of the poster appears in Madar, Roland; Camassel, Jean and Blanquet Elisabeth (eds.) Materials Science Forum. Silicon Carbide and Related Materials. Volumes 457-460 (2004): 309-312
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Google™ Scholar:Hernández, M.J. - Cervera Goy, Manuel - Piqueras, Juan - Caño, T. del - Jiménez, J.

This item appears in the following Collection(s)

  • Producción científica en acceso abierto de la UAM [15094]

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