Low temperature ECR-PECVD microcristallyne SiC growth by pulsed gas flows

dc.contributor.author	Hernández, M.J.
dc.contributor.author	Cervera Goy, Manuel
dc.contributor.author	Piqueras, Juan
dc.contributor.author	Caño, T. del
dc.contributor.author	Jiménez, J.
dc.date.accessioned	2014-02-18T10:22:51Z
dc.date.available	2013-10-18
dc.date.issued	2003
dc.identifier.citation	[Poster] 10th International Conference on Silicon Carbide and Related Materials (ICSCRM'03) held on 2003 in Lyon (France)
dc.identifier.uri	http://hdl.handle.net/10486/13960
dc.description	This is an electronic version of the poster presented at the International conference on Silicon Carbide and related materials (ICSCRM'03) held in Lyon (France) on 2003
dc.description	The article of the poster appears in Madar, Roland; Camassel, Jean and Blanquet Elisabeth (eds.) Materials Science Forum. Silicon Carbide and Related Materials. Volumes 457-460 (2004): 309-312
dc.format.mimetype	Application/pdf
dc.language.iso	eng
dc.subject	Fisica
dc.subject	Silicon Carbide
dc.subject	Thin film
dc.title	Low temperature ECR-PECVD microcristallyne SiC growth by pulsed gas flows
dc.type	other
dc.type	conferencePoster
dc.rights.accessRights	openAccess	en
dc.authorUAM	Piqueras Piqueras, Juan (259291)
dc.facultadUAM	Facultad de Ciencias