Magnetization reversal in sub-100 nm magnetic tunnel junctions with ultrathin MgO barrier biased along the hard axis
EntityUAM. Departamento de Física de la Materia Condensada
PublisherAmerican Institute of Physics
10.1063/1.4794537Applied Physics Letters 102.9 (2013): 092404
ISSN0003-6951 (print); 1077-3118 (online)
Funded byThis work has been supported by the Spanish MINECO (MAT2012-32743, CONSOLIDER CSD2007-00010) and Comunidad de Madrid (P2009/MAT-1726) grants, as well as by the French National Research Agency ANR (MILESTONE ANR-09-NANO-037).
ProjectComunidad de Madrid. S2009/MAT-1726/NANOBIOMAGNET
SubjectsMagnetic tunnel junctions; Electrodes; Magnetization reversals; Current density; Torque; Física
NoteThe following article appeared in Applied Physics Letters 102.9 (2013): 092404 and may be found at http://scitation.aip.org/content/aip/journal/apl/102/9/10.1063/1.4794537
Rights© 2013 American Institute of Physics
We report on room temperature magnetoresistance and low frequency noise in sub-100 nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9 nm) barriers. For magnetic fields applied along the hard axis, we observe current induced magnetization switching between the antiparallel and parallel alignments at dc current densities as low as 4 × 106 A/cm2. We attribute the low value of the critical current to the influence of localized reductions in the tunnel barrier, which affects the current distribution. The analysis of random telegraph noise, which appears in the field interval near a magnetization switch, provides an estimate to the dimension of the pseudo pinholes that trigger the magnetization switching via local spin torque. Micromagnetic simulations qualitatively and quantitatively reproduce the main experimental observations
Google Scholar:Cascales, Juan Pedro - Sambricio, J. L. - Herranz, D. - Ebels, U. - Katine, J.A. - Aliev Kazanski, Farkhad
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