Mañana, JUEVES, 24 DE ABRIL, el sistema se apagará debido a tareas habituales de mantenimiento a partir de las 9 de la mañana. Lamentamos las molestias.
Isothermal close space sublimation for II-VI semiconductor filling of porous matrices
Entity
UAM. Departamento de Física AplicadaPublisher
Springer New YorkDate
2012-07-23Citation
10.1186/1556-276X-7-409
Nanoscale Research Letters 7 (2012): 409
ISSN
1931-7573 (print); 1556-276X (online)DOI
10.1186/1556-276X-7-409Funded by
Osvaldo de Melo and Vicente Torres-Costa acknowledge the support given by the agreement between the University of Havana and the Autonomous University of Madrid. Research funding has been provided by projects MAT2008-06858-C02-02 (Spain) and Consolider FUNCOAT CSD2008-00023 (Spain)Editor's Version
http://dx.doi.org/10.1186/1556-276X-7-409Subjects
II-VI semiconductors; Nanostructures; Porous silicon; Rutherford backscattering spectroscopy; Thin films; FísicaRights
© 2012 Torres-Costa et al.Abstract
Isothermal close space sublimation, a simple and low-cost physical vapour transport technique, was used to infiltrate ZnTe and CdSe semiconductors in porous silicon. The structure of the embedded materials was determined by X-ray diffraction analysis while Rutherford backscattering spectra allowed determining the composition profiles of the samples. In both cases, a constant composition of the II-VI semiconductors throughout the porous layer down to the substrate was found. Resonance Raman scattering of the ZnTe samples indicates that this semiconductor grows in nanostructured form inside the pores. Results presented in this paper suggest that isothermal close space sublimation is a promising technique for the conformal growth of II-VI semiconductors in porous silicon
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Google Scholar:Torres Costa, Vicente
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De Melo, Claudia
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Climent Font, Aurelio
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Argulló-Rueda, Fernando
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De Melo, Osvaldo
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