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Rapid thermal annealing behavior of amorphous SiC layers deposited by electron cyclotron resonance plasma

Author
Gómez Arribas, Fco. Javieruntranslated; Garrido Salas, Javieruntranslated; Martínez Rodríguez, Javier; Piqueras, Juan
Entity
UAM. Departamento de Física Aplicada; UAM. Departamento de Ingeniería Informática
Publisher
Electrochemical Society, Inc.
Date
1996-01
Citation
Journal of the Electrochemical Society 143.1 (1996): 271-277
ISSN
0013-4651 (print); 1945-7111 (online)
DOI
10.1149/1.1836421
Editor's Version
http://dx.doi.org/10.1149/1.1836421
Subjects
Plasma deposition; Annealing; Cyclotron Resonance; Carbon compounds; Silicon compounds; Hydrogen compounds; Fourier transform spectroscopy; Infrared spectroscopy; Spectrochemical analysis; Telecomunicaciones
URI
http://hdl.handle.net/10486/666478
Note
The archival version of this work was published in Journal of the electrochemical society 143.1 (1996): 271-277
Rights
© The Electrochemical Society, Inc. 1996. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS)

Abstract

Hydrogenated amorphous silicon carbide, a‐SiC:H, has been deposited by electron cyclotron resonance plasmas. Operating in methane excess (Formula flow ratios between 2 and 4) and at high enough microwave powers, the deposited SiC films are close to stoichiometric. In these SiC layers, only small traces of the Formula and Formula stretching bands can be detected. Rapid thermal annealing leads to nearly complete dehydrogenation of the SiC layers deposited under these conditions as deduced from ellipsometric and infrared spectroscopy.
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Google™ Scholar:Gómez Arribas, Fco. Javier - Garrido Salas, Javier - Martínez Rodríguez, Javier - Piqueras, Juan

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