Hydrogen incorporation and crystallization of nanocrystalline silicon deposited by electron cyclotron resonance plasmas
Entity
UAM. Departamento de Física Aplicada; UAM. Departamento de Ingeniería InformáticaPublisher
Electrochemical Society, Inc.Date
1999-05-01Citation
10.1149/1.1391874
Journal of the Electrochemical Society 146.5 (1999): 1966-1970
ISSN
0013-4651 (print); 1945-7111 (online)DOI
10.1149/1.1391874Editor's Version
http://jes.ecsdl.org/content/146/5/1966.full.pdf+htmlSubjects
TelecomunicacionesNote
The archival version of this work was published in J. Electrochem. Soc.146.5, (1999): 1966-1970.Rights
© The Electrochemical Society, Inc. 1999. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS)Abstract
Nanocrystalline silicon layers have been deposited by electron cyclotron resonance chemical vapor deposition from silane as precursor.
Although hydrogen was not deliberately introduced in the plasma it was incorporated in the grown layers as evidenced by
the presence of a main infrared absorption band around 2100 cm21 with a shoulder at 2000 cm21. This suggests that most of the
hydrogen is bonded to internal surfaces of microcavities instead of isolated Si–H bonds. In the first few hundreds, ,500 Å, of
deposited layers, the estimated hydrogen concentration is rather low, below 5 atom %, and increases strongly for larger thicknesses.
Solid phase crystallization at ,11008C occurs in thin layers close to the substrates in which the hydrogen concentration is below
a certain critical value of ,5 atom %
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Google Scholar:Holgado González-Guerrero, Susana
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Martínez Rodríguez, Javier
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Garrido Salas, Javier
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Piqueras, Juan
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