Operation speed of polariton condensate switches gated by excitons
Entity
UAM. Departamento de Física de MaterialesPublisher
American Physical SocietyDate
2014-06-17Citation
10.1103/PhysRevB.89.235312
Physical Review B 89.23 (2014): 235312
ISSN
1098-0121 (print); 1550-235X (online)DOI
10.1103/PhysRevB.89.235312Funded by
C.A. acknowledges financial support from Spanish FPU scholarships. P.S. acknowledges GreekGSRT program “ARISTEIA (1978) and EU ERC “Polaflow” for financial support. The work was partially supported by the Spanish MEC MAT2011-22997, CAM (S-2009/ESP-1503), and INDEX (289968) projectsProject
Comunidad de Madrid. S2009/ESP-1503/Q&CLIGHTEditor's Version
http://dx.doi.org/10.1103/PhysRevB.89.235312Subjects
Photoluminescence; FísicaRights
© 2014 American Physical SocietyAbstract
We present a time-resolved photoluminescence (PL) study in real and momentum space of a polariton
condensate switch in a quasi-one-dimensional semiconductor microcavity. The polariton flow across the ridge
is gated by excitons inducing a barrier potential due to repulsive interactions. A study of the device operation
dependence on the power of the pulsed gate beam obtains a satisfactory compromise for the on-off signal ratio
and switching time of the order of 0.3 and ∼50 ps, respectively. The opposite transition is governed by the
long-lived gate excitons, consequently, the off-on switching time is ∼200 ps, limiting the overall operation speed
of the device to ∼3 GHz. The experimental results are compared to numerical simulations based on a generalized
Gross-Pitaevskii equation, taking into account incoherent pumping, decay, and energy relaxation within the
condensate
Files in this item
Google Scholar:Antón, C.
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Liew, T. C H
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Sarkar, D.
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Martín, M. D.
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Hatzopoulos, Z.
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Eldridge, P. S.
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Savvidis, P. G.
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Viña Liste, Luis M.
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