Disorder and variable-range hopping conductivity in Cu 2ZnSnS4 thin films prepared by flash evaporation and post-thermal treatment
Entity
UAM. Departamento de Física AplicadaPublisher
ElsevierDate
2014-05-25Citation
10.1016/j.jallcom.2014.01.177
Journal of Alloys and Compounds 596 (2014): 140 - 144
ISSN
0925-8388 (print); 1873-4669 (online)DOI
10.1016/j.jallcom.2014.01.177Funded by
This research is supported by the People Programme (Marie Curie Actions) of the European Union’s Seventh Framework Program FP7/2007-2013/ under REA grant agreement 269167 (PVICOKEST), the Spanish MINECO project (KEST- PV, ENE2010-21541-C03) and FRCFB 13.820.05.11/BF project. RC acknowledges financial support from Spanish MINECO within the program Ramón y Cajal (RYC-2011-08521)Project
info:eu-repo/grantAgreement/EC/FP7/269167; Gobierno de España. ENE2010-21541-C03; Gobierno de España. RYC-2011-08521; Gobierno de España. FRCFB 13.820.05.11/BFEditor's Version
http://dx.doi.org/10.1016/j.jallcom.2014.01.177Subjects
Acceptor band; Cu2ZnSnS4; Flash evaporation; Hopping conductivity; Kesterite; Solar cell; FísicaRights
© 2014 Elsevier B.V. All rights reservedEsta obra está bajo una licencia de Creative Commons Reconocimiento-NoComercial-SinObraDerivada 4.0 Internacional.
Abstract
Resistivity, p(T), of as-grown and annealed Cu2ZnSnS4 films, obtained by flash evaporation, is investigated between T ~ 10 - 300 K. A correlation between the transport properties and the growth conditions of the thin films is also explored. The behavior of p(T) in the as-grown films exhibits a close proximity to the metal-insulator transition (MIT), whereas annealing shifts the material from the MIT towards an insulating side. This is attributable to an increased microscopic lattice disorder, which is substantiated by the analysis of the Mott variable-range hopping conductivity observed up to T ~ 220 - 280 K (120 - 180 K) in the as-grown (annealed) films. An increased width of the acceptor band, a decreased relative acceptor concentration, N/Nc and lower values of the mean density of the localized states, g, are obtained after annealing
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Google Scholar:Guc, M.
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Caballero, Raquel
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Lisunov, K. G.
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López, N.
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Arushanov, E.
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Merino Álvarez, José Manuel
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León, M.
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