Helical networks in twisted bilayer graphene under interlayer bias
Entity
UAM. Departamento de Física de la Materia CondensadaDate
2013-09-23Citation
10.1103/PhysRevB.88.121408
Physical Review B 88.12 (2013): 121408
ISSN
1098-0121; 1550-235X (online)DOI
10.1103/PhysRevB.88.121408Funded by
We acknowledge financial support from the Spanish Ministry of Economy (MINECO) through the Ramón y Cajal programme, Grants No. FIS2010-21883 (E.P.), and No. FIS2011-23713, and from the European Research Council Advanced Grant, Contract No. 290846 (P.S-J.)Project
Gobierno de España.FIS2010-21883; Gobierno de España. FIS2011-23713; info:eu-repo/grantAgreement/EC/FP7/290846Editor's Version
http://dx.doi.org/10.1103/PhysRevB.88.121408Subjects
FísicaRights
© 2013 American Physical SocietyAbstract
A twisted graphene bilayer exhibits a triangular Moir pattern in the local stacking, that smoothly alternates between the three basic types AA ′, AB′, and BA′. Under an interlayer bias U, the latter two types develop a spectral gap, characterizsed by opposite valley Chern numbers. We show that for large enough Moir periods and bias, these regions become depleted electronically, and topologically protected helical modes appear at their boundaries. This gives rise to a delocalized topological network of the Chalker-Coddington type, composed of valley current vortices. This network can be tailored by controlled deposition of valley-mixing adsorbates, which block transmission in selected links, thus opening the possibility of custom topological nanoelectronics
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Google Scholar:San-Jose, Pablo
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Prada, Elsa
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