Quantum Hall effect in graphene with twisted bilayer stripe defects
Entity
UAM. Departamento de Física de la Materia CondensadaPublisher
American Physical SocietyDate
2013-05-21Citation
10.1103/PhysRevB.87.205429
Physical Review B 87.20 (2013): 205429
ISSN
1098-0121 (print); 1550-235X (online)DOI
10.1103/PhysRevB.87.205429Funded by
We acknowledge financial support from the EU through FP7 STREP ConceptGraphene (T.L.), the Swedish Foundation for Strategic Research (T.L.), the CSIC JAE-Doc program and the Spanish Ministry of Science and Innovation through Grants No. FIS2011-23713 (P.S.-J.) and No. FIS2009-08744 (E.P.), and the European Research Council Advanced Grant, Contract No. 290846 (P.S.-J.). This research was supported in part by the National Science Foundation under Grant No. NSF PHY05-51164Project
Gobierno de España. FIS2011-23713; Gobierno de España. FIS2009-08744; info:eu-repo/grantAgreement/EC/FP7/290846Editor's Version
http://dx.doi.org/10.1103/PhysRevB.87.205429Subjects
FísicaRights
© 2013 American Physical SocietyAbstract
We analyze the quantum Hall effect in single layer graphene with bilayer stripe defects. Such defects are often encountered at steps in the substrate of graphene grown on silicon carbide. We show that AB or AA stacked bilayer stripes result in large Hall conductivity fluctuations that destroy the quantum Hall plateaux. The fluctuations are a result of the coupling of edge states at opposite edges through currents traversing the stripe. Upon rotation of the second layer with respect to the continuous monolayer (a twisted-bilayer stripe defect), such currents decouple from the extended edge states and develop into long-lived discrete quasibound states circulating around the perimeter of the stripe. Backscattering of edge modes then occurs only at precise resonant energies, and hence the quantum Hall plateaux are recovered as twist angle grows
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Google Scholar:Löfwander, Tomas
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San-Jose, Pablo
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Prada, Elsa
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