Mañana, JUEVES, 24 DE ABRIL, el sistema se apagará debido a tareas habituales de mantenimiento a partir de las 9 de la mañana. Lamentamos las molestias.
Magnetic state dependent transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films
Entity
UAM. Departamento de Física de la Materia CondensadaPublisher
American Institute of Physics Inc.Date
2015-11-01Citation
10.1063/1.4935441
AIP Advances 5.11 (2015): 117207
ISSN
2158-3226 (online)DOI
10.1063/1.4935441Funded by
We Acknowledge the support by the Spanish MINECO (MAT2012-32743), and the Comunidad de Madrid through NANOFRONTMAG-CM (S2013/MIT-2850) and CCC-UAM (SVORTEX)Project
Gobierno de España. MAT2012-32743; Comunidad de Madrid. S2013/MIT-2850/NANOFRONTMAGEditor's Version
http://dx.doi.org/10.1063/1.4935441Subjects
Ferromagnetic materials; Oxide films; Photovoltaic effects; FísicaRights
© 2015 Author(s)Abstract
We investigate the influence of an external magnetic field on the magnitude and dephasing of the transient lateral photovoltaic effect (T-LPE) in lithographically patterned Co lines of widths of a few microns grown over naturally passivated p-type Si(100). The T-LPE peak-to-peak magnitude and dephasing, measured by lock-in or through the characteristic time of laser OFF exponential relaxation, exhibit a notable influence of the magnetization direction of the ferromagnetic overlayer. We show experimentally and by numerical simulations that the T-LPE magnitude is determined by the Co anisotropic magnetoresistance. On the other hand, the magnetic field dependence of the dephasing could be described by the influence of the Lorentz force acting perpendiculary to both the Co magnetization and the photocarrier drift directions. Our findings could stimulate the development of fast position sensitive detectors with magnetically tuned magnitude and phase responses
Files in this item
Google Scholar:Martínez, Isidoro
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Cascales, Juan Pedro
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Lara, Antonio
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Andres, Pablo
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Aliev Kazanski, Farkhad
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