SnS thin films grown by sulfurization of evaporated Sn layers: Effect of sulfurization temperature and pressure
Entity
UAM. Departamento de Física AplicadaPublisher
Elsevier B.V.Date
2016-08-01Citation
10.1016/j.tsf.2016.06.018
Thin Solid Films 612 (2016): 202-207
ISSN
0040-6090DOI
10.1016/j.tsf.2016.06.018Funded by
RC acknowledges financial support from Spanish MINECO within the Ramón y Cajal programme (RYC-2011-08521)Project
Gobierno de España. RYC-2011-08521Editor's Version
http://dx.doi.org/10.1016/j.tsf.2016.06.018Subjects
Earth abundant; SnS; SnS secondary phase 2; Solar cells; Sulfurization; FísicaRights
© 2016 Elsevier B.V.Esta obra está bajo una licencia de Creative Commons Reconocimiento-NoComercial-SinObraDerivada 4.0 Internacional.
Abstract
SnS thin films were grown by sulfurization of Sn layers evaporated by electron beam. The effect of sulfurization parameters, such as temperature and pressure, on the properties of tin sulfide layers has been investigated. Ar pressure used during the sulfurization has a strong impact on the development of a proper SnS/Mo back interface. However, the sulfurization temperature is the parameter that regulates the formation of an orthorhombic single phase SnS thin film with the optimum properties to be used as absorber for solar cell devices. Sulfurization temperature of 220 °C for 240 min led to the formation of single phase tin sulfide layers. Direct band gap energy about 1.2 eV has been determined
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Google Scholar:Caballero, Raquel
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Condé, V.
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León, M.
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