Crecimiento y caracterización de GaSb puro y dopado obtenido mediante el método Bridgman

Plaza Canga-Argüelles, José Luis

UAM_Biblioteca

Author

Plaza Canga-Argüelles, José Luis

Advisor

Diéguez, Ernesto

Entity

UAM. Departamento de Física de la Materia Condensada

Date

2000-12-11

Subjects

Semiconductores - Tesis doctorales; Física

URI

http://hdl.handle.net/10486/674616

Note

Tesis doctoral inédita leida en la Universidad Autónoma de Madrid, Facultad de Ciencias, Departamento de Física de Materiales. Fecha de lectura: 11-12-2000

Show full item record

Files in this item

Name

plaza_canga_argeuelles_jose_luis.pdf

Size

7.762Mb

Format

PDF

Description

Texto de la Tesis Doctoral

Google™ Scholar:Plaza Canga-Argüelles, José Luis

This item appears in the following Collection(s)

Trabajos de estudiantes (tesis doctorales, TFMs, TFGs, etc.) [19853]

UAM_Biblioteca

Crecimiento y caracterización de GaSb puro y dopado obtenido mediante el método Bridgman

Author

Advisor

Entity

Date

Subjects

URI

Note

Files in this item

This item appears in the following Collection(s)

Related items

Modification of the optical and structural properties of ZnO nanowires by low-energy Ar+ ion sputtering ﻿

Plasmon assisted Nd3+-based solid-state nanolaser ﻿

Plasmon enhanced energy-transfer up-conversion in Yb3+-Er3+ co-doped LiNbO3 crystal ﻿

Modification of the optical and structural properties of ZnO nanowires by low-energy Ar+ ion sputtering

Plasmon assisted Nd3+-based solid-state nanolaser

Plasmon enhanced energy-transfer up-conversion in Yb3+-Er3+ co-doped LiNbO3 crystal