Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction
Entity
UAM. Departamento de Física AplicadaPublisher
Nature Publishing GroupDate
2016-06-28Citation
Scientific Reports 6 (2016): 28459ISSN
2045-2322 (online)DOI
10.1038/srep28459Funded by
The authors thank the FEI company for the EDX measurements and HR-BF-STEM data. This work was supported by the MAT2010-15206 (CICYT, Spain), EU-COST Action MP0805, and P09-TEP-5403 (Junta de Andalucía with EU-FEDER participation). We acknowledge support by FCT Portugal (PTDC/FIS NAN/0973/2012, SFRH/BPD/74095/2010, Investigador FCT), and Juan de la Cierva program (JCI-2012-14509). K.M. acknowledges support from the Deutsche Forschungsgemeinschaft (DFG) under contract No. MU 3660/1-1. T.G: acknowledges support from DFG (R02051/11-1)Project
Gobierno de España. MAT2010-15206Editor's Version
http://dx.doi.org/10.1038/srep28459Subjects
Electron diffraction; Polarization; Scanning transmission electron microscopy; FísicaRights
© 2016, The Author(s)
Abstract
The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning transmission electron microscopy mode has been used to simultaneously measure the strain state and the induced piezoelectric fields in a GaN/AlN multiple quantum well system
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Google™ Scholar:Carvalho, Daniel
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Müller-Caspary, Knut
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Schowalter, Marco
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Grieb, Tim
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Mehrtens, Thorsten
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Rosenauer, Andreas
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Ben, Teresa
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García, Rafael
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Redondo-Cubero, Andrés
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Lorenz, Katharina
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Daudin, Bruno
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Morales, Francisco M.