Photodetector fabrication by dielectrophoretic assembly of GaAs nanowires grown by a two-steps method
Entity
UAM. Departamento de Física AplicadaPublisher
Society of Photo-optical Instrumentation Engineers (SPIE)Date
2017-01-01Citation
10.1117/12.2274007
Proceedings SPIE 10353, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications . edited by Manijeh Razeghi, Oleg Mitrofanov, José Luis Pau Vizcaíno, Chee Hing Tan. 29 August 2017
ISSN
0277-786X (print); 1996-756X (online)DOI
10.1117/12.2274007Funded by
N. López acknowledges support of the European Commission by Marie Curie International Incoming Fellowship PIIF-GA-2012-326579. The authors also acknowledge the support from MINECO under TEC2013-48350-R and TEC2016-78433-R projectsProject
info:eu-repo/grantAgreement/EC/FP7/326579; Gobierno de España. TEC2013-48350-R; Gobierno de España. TEC2016-78433-REditor's Version
https://doi.org/10.1117/12.2274007Subjects
Chemical beam epitaxy; Dielectrophoresis; Photodetector; Semiconductor nanowire; FísicaNote
Carlos García Núñez, Alejandro F. Braña, Nair López, José L. Pau, Basilio J. García, "Photodetector fabrication by dielectrophoretic assembly of GaAs nanowires grown by a two-steps method", Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications. Proc. SPIE 10353 (29 August 2017); doi: 10.1117/12.2274007. Copyright 2017 Society of Photo-Optical Instrumentation Engineers, One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibitedProceedings of Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications Conference (San Diego, California, United States)
Rights
© 2017 Society of Photo-Optical Instrumentation EngineersAbstract
GaAs nanowires (NWs) are promising advanced materials for the development of high performance photodetectors in the visible and infrared range. In this work, we optimize the epitaxial growth of GaAs NWs compared to conventional procedures, by introducing a novel two-steps growth method that exhibits an improvement of the resulting NW aspectratio and an enhancement of the NW growth rate. Moreover, we investigate the contactless manipulation of NWs using non-uniform electric fields to assemble a single GaAs NW on conductive electrodes, resulting in assembly yields above 90%/site and an alignment yields of around 95%. The electrical characteristics of the dielectrophoretic contact formed between the NW and the electrode have been measured, observing that the use of n-type Al-doped ZnO (AZO) as electrode material for NW alignment produces Schottky barrier contacts with the GaAs NW body. Moreover, our results show the fast fabrication of diodes with rectifying characteristics due to the formation of a low-resistance contact between the Ga catalytic droplet at the tip of the NW and the AZO electrode. The current-voltage measurements of a single GaAs NW diode under different illumination conditions show a strong light responsivity of the forward bias characteristic mainly produced by a change on the series resistance
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Google Scholar:García Núñez, Carlos
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Braña de Cal, Alejandro Francisco
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López, Nair
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Pau Vizcaíno, José Luis
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García, Basilio J.
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