Electron transport and noise spectroscopy in organic magnetic tunnel junctions with PTCDA and Alq3 barriers
Entity
UAM. Departamento de Física de la Materia Condensada; UAM. Centro de Investigación en Fisica de la Materia Condensada (IFIMAC); UAM. Instituto Universitario de Ciencia de Materiales Nicolás Cabrera (INC)Publisher
Society of Photo-optical Instrumentation Engineers (SPIE)Date
2016-01-01Citation
10.1117/12.2237721
Proceedings SPIE 9931, Spintronics IX, Edited by Henri-Jean Drouhin, Jean-Eric Wegrowe, Manijeh Razeghi. 4 November 2016
ISSN
0277-786X (print); 1996-756X (online)DOI
10.1117/12.2237721Funded by
Support by UAM-Santander collaborative project (2015/ASIA/04) as well as by the Spanish MINECO (MAT2012-32743 and MAT2015-66000-P) grants and the Comunidad de Madrid through NANOFRONTMAG (S2013/MIT-2850) is also gratefully acknowledged. J.P.C. acknowledges support from the Fundacion Seneca (Region de Murcia) posdoctoral fellowship (19791/PD/15)Project
Gobierno de España. MAT2012-32743; Gobierno de España. MAT2015-66000-P; Comunidad de Madrid. S2013/MIT-2850/NANOFRONTMAGEditor's Version
https://doi.org/10.1117/12.2237721Subjects
Organic spintronics; Shot noise; Spinterface; Two-level systems; Variable range hopping; FísicaNote
Isidoro Martinez, Juan Pedro Cascales, Jhen-Yong Hong, Minn-Tsong Lin, Mirko Prezioso, Alberto Riminucci, Valentin A. Dediu, Farkhad G. Aliev, "Electron transport and noise spectroscopy in organic magnetic tunnel junctions with PTCDA and Alq3 barriers", Spintronics IX, Proc. SPIE 9931 (4 November 2016); doi: 10.1117/12.2237721. Copyright 2016 Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibitedProceedings of IX Spintronics Conference ( San Diego, California, United States)
Rights
© 2016 Society of Photo-Optical Instrumentation EngineersAbstract
The possible influence of internal barrier dynamics on spin, charge transport and their fluctuations in organic spintronics remains poorly understood. Here we present investigation of the electron transport and low frequency noise at temperatures down to 0.3K in magnetic tunnel junctions with an organic PTCDA barriers with thickness up to 5 nm in the tunneling regime and with 200 nm thick Alq 3 barrier in the hopping regime. We observed high tunneling magneto-resistance at low temperatures (15-40%) and spin dependent super-poissonian shot noise in organic magnetic tunnel junctions (OMTJs) with PTCDA. The Fano factor exceeds 1.5-2 values which could be caused by interfacial states controlled by spin dependent bunching in the tunneling events through the molecules. 1 The bias dependence of the low frequency noise in OMTJs with PTCDA barriers which includes both 1/f and random telegraph noise activated at specific biases will also be discussed. On the other hand, the organic junctions with ferromagnetic electrodes and thick Alq 3 barriers present sub-poissonian shot noise which depends on the temperature, indicative of variable range hopping
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Google Scholar:Martínez, Isidoro
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Cascales, Juan Pedro
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Hong, Jhen Yong
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Lin, Minn Tsong
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Prezioso, Mirko
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Riminucci, Alberto
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Dediu, Valentin A.
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Aliev Kazanski, Farkhad
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