Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells
EntityUAM. Departamento de Física Aplicada
PublisherSociety of Photo-optical Instrumentation Engineers (SPIE)
10.1117/12.2211429Proceedings of SPIE 9748 Gallium Nitride Materials and Devices XI, edited by Jen-Inn Chyi, Hiroshi Fujioka, Hadis Morkoç, Yasushi Nanishi, Ulrich T. Schwarz, Jong-In Shim. 26 Febraury 2016
ISSN0277-786X (print); 1996-756X (online)
Funded byWe acknowledge funding by FCT Portugal (PTDC/FIS-NAN/0973/2012, UID/CTM/50025/2013, and RECI/FISNAN/0183/2012 (FCOMP-01-0124-FEDER-027494 and individual grants SFRH/BD/111733/2015 (MCS), SFRH/BPD/111285/2015 (MP), SFRH/BD/76300/2011 (JR), and Investigador FCT (KL)). ARC acknowledges Juan de la Cierva grant (under contract number JCI-2012-14509, Spain
ProjectGobierno de España. JCI-2012-14509
SubjectsInGaN/GaN; Ion implantation; Quantum well intermixing; Quantum wells; Física
NoteK. Lorenz, A. Redondo-Cubero, M. B. Lourenço, M. C. Sequeira, M. Peres, A. Freitas, L. C. Alves, E. Alves, M. P. Leitão, J. Rodrigues, N. Ben Sedrine, M. R. Correia, T. Monteiro, "Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells", Gallium Nitride Materials and Devices XI, Proc. SPIE 9748,97480L (26 February 2016); doi: 10.1117/12.2211429. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited
Proceeding of the XI Gallium Nitride Materials and Devices Conference (San Francisco, California, United States)
Rights© 2016 Society of Photo-Optical Instrumentation Engineers
Compositional grading of InGaN/GaN multi quantum wells (QWs) was proposed to mitigate polarization effects and Auger losses in InGaN-based light emitting diodes [K. P. O'Donnell et al., Phys. Status Solidi RRL 6 (2012) 49]. In this paper we are reviewing our recent attempts on achieving such gradient via quantum well intermixing. Annealing up to 1250 °C resulted in negligible interdiffusion of QWs and barriers revealing a surprising thermal stability well above the typical MOCVD growth temperatures. For annealing at 1400 °C results suggest a decomposition of the QWs in regions with high and low InN content. The defect formation upon nitrogen implantation was studied in detail. Despite strong dynamic annealing effects, which keep structural damage low, the created defects strongly quench the QW luminescence even for low implantation fluences. This degradation could not be reversed during thermal annealing and is hampering the use of implantation induced quantum well intermixing in InGaN/GaN structures.
Google Scholar:Lorenz, K. - Redondo-Cubero, A. - Lourenço, M. B. - Sequeira, M. C. - Peres, M. - Freitas, A. - Alves, L. C. - Alves, E. - Leitão, M. P. - Rodrigues, J. - Ben Sedrine, N. - Correia, M. R. - Monteiro, T.
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Sousa, Marco A.; Esteves, Teresa C.; Sedrine, Nabiha Ben; Rodrigues, Joana; Lourenço, Márcio B.; Redondo-Cubero, Andrés; Alves, Eduardo; O'Donnell, Kevin P.; Bockowski, Michal; Wetzel, Christian; Correia, Maria R.; Lorenz, Katharina; Monteiro, Teresa
Carvalho, Daniel; Müller-Caspary, Knut; Schowalter, Marco; Grieb, Tim; Mehrtens, Thorsten; Rosenauer, Andreas; Ben, Teresa; García, Rafael; Redondo-Cubero, Andrés; Lorenz, Katharina; Daudin, Bruno; Morales, Francisco M.
Perkins, J.; Foster, G. M.; Myer, M.; Mehra, S.; Chauveau, J. M.; Hierro, A.; Redondo-Cubero, A.; Windl, W.; Brillson, L.J.