Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells

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dc.contributor.author Lorenz, K.
dc.contributor.author Redondo-Cubero, A.
dc.contributor.author Lourenço, M. B.
dc.contributor.author Sequeira, M. C.
dc.contributor.author Peres, M.
dc.contributor.author Freitas, A.
dc.contributor.author Alves, L. C.
dc.contributor.author Alves, E.
dc.contributor.author Leitão, M. P.
dc.contributor.author Rodrigues, J.
dc.contributor.author Ben Sedrine, N.
dc.contributor.author Correia, M. R.
dc.contributor.author Monteiro, T.
dc.contributor.other UAM. Departamento de Física Aplicada es_ES
dc.date.accessioned 2018-04-18T17:17:47Z
dc.date.available 2018-04-18T17:17:47Z
dc.date.issued 2016-01-01
dc.identifier.citation Proceedings of SPIE 9748 Gallium Nitride Materials and Devices XI, edited by Jen-Inn Chyi, Hiroshi Fujioka, Hadis Morkoç, Yasushi Nanishi, Ulrich T. Schwarz, Jong-In Shim. 26 Febraury 2016 en_US
dc.identifier.issn 0277-786X (print) es_ES
dc.identifier.issn 1996-756X (online) es_ES
dc.identifier.uri http://hdl.handle.net/10486/681730
dc.description K. Lorenz, A. Redondo-Cubero, M. B. Lourenço, M. C. Sequeira, M. Peres, A. Freitas, L. C. Alves, E. Alves, M. P. Leitão, J. Rodrigues, N. Ben Sedrine, M. R. Correia, T. Monteiro, "Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells", Gallium Nitride Materials and Devices XI, Proc. SPIE 9748,97480L (26 February 2016); doi: 10.1117/12.2211429. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited es_ES
dc.description Proceeding of the XI Gallium Nitride Materials and Devices Conference (San Francisco, California, United States) en_US
dc.description.abstract Compositional grading of InGaN/GaN multi quantum wells (QWs) was proposed to mitigate polarization effects and Auger losses in InGaN-based light emitting diodes [K. P. O'Donnell et al., Phys. Status Solidi RRL 6 (2012) 49]. In this paper we are reviewing our recent attempts on achieving such gradient via quantum well intermixing. Annealing up to 1250 °C resulted in negligible interdiffusion of QWs and barriers revealing a surprising thermal stability well above the typical MOCVD growth temperatures. For annealing at 1400 °C results suggest a decomposition of the QWs in regions with high and low InN content. The defect formation upon nitrogen implantation was studied in detail. Despite strong dynamic annealing effects, which keep structural damage low, the created defects strongly quench the QW luminescence even for low implantation fluences. This degradation could not be reversed during thermal annealing and is hampering the use of implantation induced quantum well intermixing in InGaN/GaN structures. es_ES
dc.description.sponsorship We acknowledge funding by FCT Portugal (PTDC/FIS-NAN/0973/2012, UID/CTM/50025/2013, and RECI/FISNAN/0183/2012 (FCOMP-01-0124-FEDER-027494 and individual grants SFRH/BD/111733/2015 (MCS), SFRH/BPD/111285/2015 (MP), SFRH/BD/76300/2011 (JR), and Investigador FCT (KL)). ARC acknowledges Juan de la Cierva grant (under contract number JCI-2012-14509, Spain en_US
dc.format.extent 9 pag. es_ES
dc.format.mimetype application/pdf en
dc.language.iso eng en
dc.publisher Society of Photo-optical Instrumentation Engineers (SPIE) en_US
dc.relation.ispartof Proceedings of SPIE - The International Society for Optical Engineering en_US
dc.rights © 2016 Society of Photo-Optical Instrumentation Engineers en_US
dc.subject.other InGaN/GaN en_US
dc.subject.other Ion implantation en_US
dc.subject.other Quantum well intermixing en_US
dc.subject.other Quantum wells en_US
dc.title Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells en_US
dc.type conferenceObject en
dc.subject.eciencia Física es_ES
dc.relation.publisherversion https://doi.org/10.1117/12.2211429 es_ES
dc.identifier.doi 10.1117/12.2211429 es_ES
dc.identifier.publicationfirstpage 97480L-1 es_ES
dc.identifier.publicationlastpage 97480L-9 es_ES
dc.identifier.publicationvolume 9748 es_ES
dc.relation.eventdate February 26, 2016 en_US
dc.relation.eventnumber 11 es_ES
dc.relation.eventplace San Francisco, California, United States en_US
dc.relation.eventtitle XI Gallium Nitride Materials and Devices OPTO (2016) en_US
dc.relation.projectID Gobierno de España. JCI-2012-14509 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion en
dc.rights.accessRights openAccess en

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