dc.contributor.author | Esteve Paredes, Juan José | |
dc.contributor.author | Pakdel, Sahar | |
dc.contributor.author | Palacios Burgos, Juan José | |
dc.contributor.other | UAM. Departamento de Física de la Materia Condensada | es_ES |
dc.date.accessioned | 2019-12-12T09:39:53Z | |
dc.date.available | 2019-12-12T09:39:53Z | |
dc.date.issued | 2019-08-14 | |
dc.identifier.citation | Physical Review Letters Volume 123.7 (2019): 077402 | es_ES |
dc.identifier.issn | 1079-7114 (online) | en_US |
dc.identifier.issn | 0031-9007 (print) | en_US |
dc.identifier.uri | http://hdl.handle.net/10486/689548 | |
dc.description.abstract | We predict that long-lived excitons with very large binding energies can also exist in a single or few layers of monochalcogenides such as GaSe. Our theoretical study shows that excitons confined by a radial local strain field are unable to recombine despite electrons and holes coexisting in space. The localized single-particle states are calculated in the envelope function approximation based on a three-band k·p Hamiltonian obtained from density-functional-theory calculations. The binding energy and the decay rate of the exciton ground state are computed after including correlations in the basis of electron-hole pairs. The interplay between the localized strain and the caldera-type valence band characteristic of few-layered monochalcogenides creates localized electron and hole states with very different quantum numbers which hinders the recombination even for singlet excitons | en_US |
dc.description.sponsorship | Research supported by the Spanish MINECO through Grant No. FIS2016-80434-P and the María de Maeztu Programme for Units of Excellence in Research and Development (MDM-2014-0377), the Fundación Ramón Areces, and the European Union Seventh Framework Programme under Grant Agreement No. 604391 Graphene Flagship. S. P. was also supported by the VILLUM FONDEN via the Centre of Excellence for Dirac Materials (Grant No. 11744) | en_US |
dc.format.extent | 6 pag. | en_US |
dc.format.mimetype | application/pdf | en |
dc.language.iso | eng | en |
dc.publisher | American Physical Society | en_US |
dc.relation.ispartof | Physical Review Letters | en_US |
dc.rights | © 2019 American Physical Society | en_US |
dc.subject.other | Density functional theory | en_US |
dc.subject.other | Quantum theory | en_US |
dc.subject.other | Layered semiconductors | en_US |
dc.subject.other | Hamiltonians | en_US |
dc.subject.other | Ground state | en_US |
dc.subject.other | Gallium compounds | en_US |
dc.subject.other | Excitons | en_US |
dc.subject.other | Binding energy | en_US |
dc.title | Quenching of Exciton Recombination in Strained Two-Dimensional Monochalcogenides | en_US |
dc.type | article | en |
dc.subject.eciencia | Física | es_ES |
dc.relation.publisherversion | https://doi.org/10.1103/PhysRevLett.123.077402 | es_ES |
dc.identifier.doi | 10.1103/PhysRevLett.123.077402 | es_ES |
dc.identifier.publicationfirstpage | 077402-1 | es_ES |
dc.identifier.publicationissue | 7 | es_ES |
dc.identifier.publicationlastpage | 077402-6 | es_ES |
dc.identifier.publicationvolume | 123 | es_ES |
dc.relation.projectID | Gobierno de España. FIS2016-80434-P | es_ES |
dc.relation.projectID | Gobierno de España. MDM-2014-0377 | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/EC/FP7/604391 | en_US |
dc.type.version | info:eu-repo/semantics/publishedVersion | en |
dc.rights.accessRights | openAccess | en |
dc.authorUAM | Palacios Burgos, Juan José (262184) | |
dc.facultadUAM | Facultad de Ciencias | |