Laser-Beam-Patterned Topological Insulating States on Thin Semiconducting MoS2

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Show simple item record Mine, H. Kobayashi, A. Nakamura, T. Inoue, T. Pakdel, S. Marian, D. Gonzalez-Marin, E. Maruyama, S. Katsumoto, S. Fortunelli, A. Palacios, J. J. Haruyama, J.
dc.contributor.other UAM. Departamento de Física de la Materia Condensada es_ES 2019-12-12T12:31:30Z 2019-12-12T12:31:30Z 2019-10-02
dc.identifier.citation Physical Review Letters 123.14 (2019): 146803 en_US
dc.identifier.issn 0031-9007 (print) en_US
dc.identifier.issn 1079-7114 (online) en_US
dc.description.abstract Identifying the two-dimensional (2D) topological insulating (TI) state in new materials and its control are crucial aspects towards the development of voltage-controlled spintronic devices with low-power dissipation. Members of the 2D transition metal dichalcogenides have been recently predicted and experimentally reported as a new class of 2D TI materials, but in most cases edge conduction seems fragile and limited to the monolayer phase fabricated on specified substrates. Here, we realize the controlled patterning of the 1T′ phase embedded into the 2H phase of thin semiconducting molybdenum-disulfide by laser beam irradiation. Integer fractions of the quantum of resistance, the dependence on laser-irradiation conditions, magnetic field, and temperature, as well as the bulk gap observation by scanning tunneling spectroscopy and theoretical calculations indicate the presence of the quantum spin Hall phase in our patterned 1T′ phases en_US
dc.description.sponsorship The work carried out at Aoyama Gakuin University was partly supported by a grant for private universities and a Grant-in-Aid for Scientific Research (JP15K13277) awarded by MEXT. The work at the University of Tokyo was partly supported by Grantin-Aid for Scientific Research (JP17K05492, JP18H04218 and JP19H00652). J. J. P. and S. P. acknowledge Spanish MINECO through Grant No. FIS2016-80434-P, the Fundación Ramón Areces, the María de Maeztu Program for Units of Excellence in R&D (MDM-2014- 0377), the Comunidad Autónoma de Madrid through NANOMAGCOST Program, and the European Union Seventh Framework Programme under Grant Agreement No. 604391 Graphene Flagship. S. P. acknowledges the computer resources and assistance provided by the Centro de Computación Científica of the Universidad Autónoma de Madrid. S. P. was also supported by the VILLUM FONDEN via the Center of Excellence for Dirac Materials (Grant No. 11744). D. M. and E. G.-M. gratefully acknowledge support from the Graphene Flagship Graphene Core2 Contract No. 785219. E. G.-M also acknowledges IJCI-2017-32297 from Spanish MINECO/AEI en_US
dc.format.extent 6 pag. en_US
dc.format.mimetype application/pdf en
dc.language.iso eng en
dc.publisher American Physical Society en_US
dc.relation.ispartof Physical Review Letters en_US
dc.rights © 2019 American Physical Society en_US
dc.subject.other Laser beams en_US
dc.subject.other Irradiation en_US
dc.subject.other Layered semiconductors en_US
dc.subject.other Molybdenum compounds en_US
dc.subject.other Scanning tunneling microscop en_US
dc.subject.other Sulfur compounds en_US
dc.subject.other Topology en_US
dc.subject.other Transition metals en_US
dc.subject.other Spin-orbit coupling en_US
dc.subject.other Spintronics en_US
dc.subject.other Topological materials en_US
dc.subject.other Topological phase transition en_US
dc.title Laser-Beam-Patterned Topological Insulating States on Thin Semiconducting MoS2 en_US
dc.type article en
dc.subject.eciencia Física es_ES
dc.relation.publisherversion es_ES
dc.identifier.doi 10.1103/PhysRevLett.123.146803 es_ES
dc.identifier.publicationfirstpage 146803-1 es_ES
dc.identifier.publicationissue 14 es_ES
dc.identifier.publicationlastpage 146803-6 es_ES
dc.identifier.publicationvolume 123 es_ES
dc.relation.projectID Gobierno de España. FIS2016-80434-P es_ES
dc.relation.projectID Gobierno de España. MDM-2014- 0377 es_ES
dc.relation.projectID Comunidad de Madrid. P2018/NMT-4321/NANOMAGCOST es_ES
dc.relation.projectID info:eu-repo/grantAgreement/EC/FP7/604391 en_US
dc.relation.projectID info:eu-repo/grantAgreement/EC/H2020/785219/EU//GrapheneCore2 en_US
dc.type.version info:eu-repo/semantics/publishedVersion en
dc.rights.accessRights openAccess en
dc.authorUAM Palacios Burgos, Juan José (262184)

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