AlxIn1−xN on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering
Entity
UAM. Departamento de Física AplicadaPublisher
MDPIDate
2020-05-19Citation
10.3390/ma13102336
Materials 13.101 (2020): 2336
ISSN
1996-1944 (print)DOI
10.3390/ma13102336Funded by
This research was funded by the national projects from the Ministry of Research and Innovation TEC2017-84378-R and NERA (RTI2018-101037-B-I00); the projects from the Comunidad de Madrid SINFOTON2-CM (P2018/NMT-4326), MADRID-PV2 (P-2018/EMT-4308) and SOLA (CM/JIN/2019-013); the projects from the University of Alcalá ANIS (CCG2018/EXP-042) and PISA (CCG19/IA-005); and by the FEDER program. R. Blasco acknowledges the financial support of his contract associated with the Ramon y Cajal Fellowship RYC-2013-14084Project
Gobierno de España. TEC2017-84378-R; Gobierno de España. RTI2018-101037-B-I00; Comunidad de Madrid. P2018/NMT-4326/SINFOTON2-CM; Comunidad de Madrid. P-2018/EMT-4308/MADRID-PV2Editor's Version
https://doi.org/10.3390/ma13102336Subjects
AlInN; Silicon; Solar cells; Sputtering; FísicaRights
© 2020 by the authorsAbstract
We investigate the photovoltaic performance of solar cells based on n-AlxIn1−xN (x = 0–0.56) on p-Si (100) hetero-junctions deposited by radio frequency sputtering. The AlxIn1−xN layers own an optical bandgap absorption edge tuneable from 1.73 eV to 2.56 eV within the Al content range. This increase of Al content results in more resistive layers (≈10−4–1 Ω·cm) while the residual carrier concentration drops from ~1021 to ~1019 cm−3 . As a result, the top n-contact resistance varies from ≈10−1 to 1 MΩ for InN to Al0.56In0.44N-based devices, respectively. Best results are obtained for devices with 28% Al that exhibit a broad external quantum efficiency covering the full solar spectrum with a maximum of 80% at 750 nm, an open-circuit voltage of 0.39 V, a short-circuit current density of 17.1 mA/cm2 and a conversion efficiency of 2.12% under air mass 1.5 global (AM1.5G) illumination (1 sun), rendering them promising for novel low-cost III-nitride on Si photovoltaic devices. For Al contents above 28%, the electrical performance of the structures lessens due to the high top-contact resistivity
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Google Scholar:Valdueza-Felip, Sirona
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Blasco, Rodrigo
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Olea, Javier
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Díaz-Lobo, Alba
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Braña de Cal, Alejandro Francisco
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Naranjo, Fernando B.
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