Growth of silicon- and carbon-doped GaAs by chemical beam epitaxy using H2-diluted DTBSi and CBr4 precursors
Entity
UAM. Departamento de Física AplicadaPublisher
ElsevierDate
2021-07-06Citation
10.1016/j.jcrysgro.2021.126242
Journal of Crystal Growth 571 (2021): 126242
ISSN
0022-0248 (print)DOI
10.1016/j.jcrysgro.2021.126242Funded by
This work was supported by the former Ministerio de Ciencia, Innovación y Universidades under Project No. TEC2016-78433-R and the current Ministerio de Ciencia e Innovación under Project No. PID2020-114280RB-I00. S. Fernández-Garrido and N. López acknowledge the final support received through the Spanish program Ramón y Cajal (co-financed by the European Social Fund) under Grants No. RYC2016-19509 and RYC-2016-20588, respectively, from the former Ministerio de Ciencia, Innovación y Universidades. N. López also acknowledges the funding received through the European ERC Starting Grant No. 758885Project
Gobierno de España. TEC2016-78433-R; Gobierno de España. PID2020-114280RB-I00; info:eu-repo/grantAgreement/EC/H2020/758885/EU//4SUNSEditor's Version
https://doi.org/10.1016/j.jcrysgro.2021.126242Subjects
A1. Doping; A3. Chemical beam epitaxy; B1. Inorganic compounds; B2. Semiconducting gallium arsenide; B2. Semiconducting III-V materials; FísicaRights
© 2021 The Authors. Published by Elsevier B.V.Esta obra está bajo una licencia de Creative Commons Reconocimiento-NoComercial-SinObraDerivada 4.0 Internacional.
Abstract
A wide range of n- and p-type doping levels in GaAs layers grown by chemical beam epitaxy is achieved by using H2-diluted DTBSi and CBr4 as gas precursors for Si and C, respectively. We show that the doping level can be varied by modifying either the concentration or the flux of the diluted precursor. Specifically, we demonstrate carrier concentrations of 7.8 × 1017 –1.4 × 1019 cm−3 for Si, and 1 × 1017 –3.8 × 1020 cm−3 for C, as determined by Hall effect measurements. The dependence of Si incorporation on the diluted-precursor flux is found to be linear. In contrast, we observe a superlinear behavior for C doping. The dependence of the electron and hole mobility values on the carrier concentration as well as the analysis of the layers by low-temperature (12 K) photoluminescence spectroscopy indicate that the use of H2 for diluting DTBSi or CBr4 has no effect on the electrical and optical properties of GaAs
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Google Scholar:Ben Saddik, K.
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Braña de Cal, Alejandro Francisco
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López, N.
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García, B. J.
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Fernández-Garrido, S.
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Electronics and Semiconductors Group (ElySe)
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