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Low-frequency 1/f noise characteristics of ultra-thin AlOx-based resistive switching memory devices with magneto-resistive responses

Author
Hong, JY.; Chen, CY.; Ling, DC.; Martínez, I.; González-Ruano, C.; Aliev Kazanski, Farkhaduntranslated
Entity
UAM. Departamento de Física de la Materia Condensada
Publisher
MDPI
Date
2021-10-16
Citation
Electronics 10.20 (2021): 2525
ISSN
2079-9292
DOI
10.3390/electronics10202525
Project
Gobierno de España. RTI2018-095303-B-C55
Editor's Version
https://doi.org/10.3390/electronics10202525
Subjects
Hooge’s Parameter; Low-Frequency 1/F Noise; Magneto-Resistance (Mr); Magnetic Tunnel Junction (Mtj); Resistive Switching; Física
URI
http://hdl.handle.net/10486/701487
Rights
© 2021 by the authors Licensee MDPI, Basel, Switzerland

Licencia Creative Commons
Esta obra está bajo una Licencia Creative Commons Atribución 4.0 Internacional.
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Google™ Scholar:Hong, JY. - Chen, CY. - Ling, DC. - Martínez, I. - González-Ruano, C. - Aliev Kazanski, Farkhad

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