Mañana, JUEVES, 24 DE ABRIL, el sistema se apagará debido a tareas habituales de mantenimiento a partir de las 9 de la mañana. Lamentamos las molestias.
Interfacial Exchange Phenomena Driven by Ferromagnetic Domains
Entity
UAM. Departamento de Física de la Materia CondensadaPublisher
WileyDate
2022-06-24Citation
10.1002/admi.202200331
Advanced Materials Interfaces (2022): 2200331
ISSN
2196-7350 (online)DOI
10.1002/admi.202200331Funded by
This is a highly collaborative effort between IMDEA Nanociencia and UC San Diego. The authors thank C. Urban for help in the initial stages of this work. The sample fabrication and characterization were supported by the Department of Energy’s Office of Basic Energy Science, under grant # DE-FG02-87ER45332. The magnetic and transport measurements were supported by MINECO (Ministerio de Economía y Competitividad) (FIS2016-78591-C3-1-R, PGC2018-098613-B-C21, MAT2017-89960-R, RTI2018-097895-B-C42, PCI2019-111867-2, PID2020-116181RB-C31) and by Comunidad de Madrid Regional Government (NanomagCOST-CM, Ref. S2018/MIT-2850). J.M.D. acknowledges support from MINECO through the FPI program (BES-2017-080617). IMDEA-Nanociencia acknowledges support from the ‘Severo Ochoa’ Program for Centres of Excellence in R&D (MINECO Grants SEV-2016-0686, CEX2020-001039-S)Project
Gobierno de España. FIS2016-78591-C3-1-R; Gobierno de España. PGC2018-098613-B-C21; Gobierno de España. MAT2017-89960-R; Gobierno de España. RTI2018-097895-B-C42; Gobierno de España. PCI2019-111867-2; Gobierno de España. BES-2017-080617Editor's Version
https://doi.org/10.1002/admi.202200331Subjects
Exchange-bias phenomena; Ferromagnetic domain structure; LT-v-MOKE; Magnetization reversal; Metal-insulator transition; FísicaRights
© 2022 The AuthorsEsta obra está bajo una licencia de Creative Commons Reconocimiento-NoComercial-SinObraDerivada 4.0 Internacional.
Abstract
Interfacial proximity effects in antiferromagnetic/ferromagnetic (AFM/FM) bilayers control the exchange-bias (EB) phenomena exploited in most spintronic devices, although still is lack of full understanding. Discordant results, including different exchange-bias field (HE), coercivity (HC), or blocking temperature (TB) found even in similar systems, are usually ascribed to uncontrolled parameters, namely dissimilar interfacial defects, structure, and thicknesses. Here, it is shown in the very same sample that the magnetic domain structure during the magnetization reversal of the FM layer controls those mentioned effects. Simultaneous transport and vectorial-resolved magnetic measurements performed in a V2O3/Co system during warming after different field cooling (FC) procedures exhibit a strong dependence on the FC angle and the domain structure of the FM layer. Remarkably, magnetization reversal analysis reveals 35 K of variation in TB and up to a factor of two in HE. These observations can be explained within the random-field model for the interfacial exchange coupling with a fixed AFM domain structure in contact with a variable (angle-dependent) FM domain structure. The results highlight the importance of the domain structure and magnetization reversal of the FM layer (not previously considered) in the EB phenomena, with potential to tailor interfacial effects in future spintronic devices
Files in this item
Google Scholar:Díez Toledano, José Manuel
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Cuñado, José Luis F.
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Lapa, Pavel
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Solís, Raúl
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Arnay, Icíar
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Pedraz, Patricia
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Perna, Paolo
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Bollero, Alberto
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Miranda Soriano, Rodolfo
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Schuller, Ivan K.
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Camarero de Diego, Julio
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