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Training the polarization in integrated La0.15Bi0.85FeO3-based devices

Author
Müller, Marvin; Huang, Yen Lin; Vélez, Saül; Ramesh, Ramamoorthy; Fiebig, Manfred; Trassin, Morgan
Entity
UAM. Departamento de Física de la Materia Condensada
Publisher
Wiley
Date
2021-10-04
Citation
10.1002/adma.202104688
Advanced Materials 33.52 (2021): 2104688
 
 
 
ISSN
0935-9648 (print); 1521-4095 (online)
DOI
10.1002/adma.202104688
Project
info:eu-repo/grantAgreement/EC/H2020/694955/ERC//INSEETO
Editor's Version
https://doi.org/10.1002/adma.202104688
Subjects
Advanced Materials; BiFeO 3; Domain Configurations; In-Plane Polarization; Magneto-Electric Multiferroic; Magnetoelectrics; Multiferroic Heterostructure; Multiferroics; Operando; Optical Second Harmonic Generation; Física
URI
http://hdl.handle.net/10486/704259
Rights
© 2021 The Authors

Licencia Creative Commons
Esta obra está bajo una Licencia Creative Commons Atribución 4.0 Internacional.

Abstract

The functionalities of BiFeO3-based magnetoelectric multiferroic heterostructures rely on the controlled manipulation of their ferroelectric domains and of the corresponding net in-plane polarization, as this aspect guides the voltage-controlled magnetic switching. Chemical substitution has emerged as a key to push the energy dissipation of the BiFeO3 into the attojoule range but appears to result in a disordered domain configuration. Using non-invasive optical second-harmonic generation on heavily La-substituted BiFeO3 films, it is shown that a weak net in-plane polarization remains imprinted in the pristine films despite the apparent domain disorder. It is found that this ingrained net in-plane polarization can be trained with out-of-plane electric fields compatible with applications. Operando studies on capacitor heterostructures treated in this way show the full restoration of the domain configuration of pristine BiFeO3 along with a giant net in-plane polarization enhancement. Thus, the experiments reveal a surprising robustness of the net in-plane polarization of BiFeO3 against chemical modification, an important criterion in ongoing attempts to integrate magnetoelectric materials into energy-efficient devices
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Google™ Scholar:Müller, Marvin - Huang, Yen Lin - Vélez, Saül - Ramesh, Ramamoorthy - Fiebig, Manfred - Trassin, Morgan

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  • Producción científica en acceso abierto de la UAM [17784]

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