Sulfurization of co-evaporated Cu2ZnGeSe4 layers: Influence of the precursor cation’s ratios on the properties of Cu2ZnGe(S,Se)4 thin films
Entity
UAM. Departamento de Física AplicadaPublisher
ElsevierDate
2023-02-26Citation
10.1016/j.solmat.2023.112243
Solar Energy Materials and Solar Cells 254 (2023): 112243
ISSN
0927-0248DOI
10.1016/j.solmat.2023.112243Funded by
This work was supported by Spanish Ministry of Science, Innovation and Universities Project (CELL2WIN: PID2019-104372RB-C32) and European Project INFINITE-CELL (H2020-MSCA-RISE-2017-777968). DPL acknowledges the financial support from Spanish Ministry of Science and Innovation within FPI Program. MG acknowledges the financial support from Spanish Ministry of Science, Innovation and Universities within the Juan de la Cierva Program (IJC2018-038199-I). Authors from IREC belong to the SEMS (Solar Energy Materials and Systems) Consolidated Research Group of the “Generalitat de Catalunya” (Ref. 2017 SGR 862). The authors acknowledge the service from the MiNa Laboratory at IMN-CSIC, and funding from CM (project S2018/NMT-4291 TEC2SPACE), MINECO (project CSIC13-4E-1794) and European Union (FEDER, FSE)Project
info:eu-repo/grantAgreement/EC/H2020/777968/EU//INFINITE-CELLEditor's Version
https://doi.org/10.1016/j.solmat.2023.112243Subjects
Break-off experiments; Cu ZnGe(S,Se) 2 4; Kesterite; Sulfurization; Thin films; FísicaRights
© 2023 The Authors
Esta obra está bajo una licencia de Creative Commons Reconocimiento-NoComercial-SinObraDerivada 4.0 Internacional.
Abstract
Cu2ZnGe(S,Se)4 (CZGSSe) thin films were fabricated by sulfurization of co-evaporated Cu2ZnGeSe4 (CZGSe) thin films. The goal of this work is to investigate the effect of the composition of CZGSe layers on the structural, vibrational and morphological properties of CZGSSe compounds. Different CZGSe layers with different cation's ratios (Cu-poor, Zn-rich; Cu-poor, Zn-stoichiometric and Cu-poor, Ge-rich) were investigated before and after the sulfurization process. Break-off and different cooling experiments during sulfurization of CZGSe were also carried out. Break-off experiments revealed that 440 °C is the key temperature to incorporate S into CZGSe lattice, being required 480 °C to enhance the interdiffusion of the elements. Fast cooling experiments during sulfurization appeared to be a promising strategy to avoid the formation of secondary phases. All the samples showed the CZGSSe kesterite phase, as well as higher S content and different secondary phases at the surface. These experiments demonstrate that a minimum Ge content in CZGSe is required to assist the growth of CZGSSe grains and develop a compact structure. These results indicate the importance of controlling the cation's ratio of CZGSe to develop high quality wide band gap CZGSSe compounds, which can be very attractive for different applications
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Google Scholar:Palma Lafuente, David
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Diez Silva, Pablo
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Rotaru, Victoria
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Jawhari, Tariq
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Bertram, Tobias
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Reyes Figueroa, Pablo
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Guc, Maxim
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Merino Álvarez, José Manuel
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Caballero Mesa, Ana Raquel
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