Toward nonvolatile spin-orbit devices: deposition of ferroelectric hafnia on monolayer graphene/Co/HM stacks
Entity
UAM. Departamento de Física Aplicada; UAM. Departamento de Física de la Materia CondensadaPublisher
American Chemical SocietyDate
2023-03-23Citation
10.1021/acsami.2c22205
ACS Applied Materials and Interfaces 15.13 (2023):
ISSN
1944-8244 (print); 1944-8252 (online)DOI
10.1021/acsami.2c22205Funded by
This project has received funding from the FLAG-ERA JTC 2019 grant SOgraphMEM through the partner’s national research agencies AEI/MICINN (Spain, PCI2019-111867-2) and DFG (Germany, MI 1247/18-1). The IMDEA team acknowledges support by the Community of Madrid (CM) through project P2018/NMT-4321 (NANOMAGCOST), by MICINN through projects RTI2018-097895-B-C42, 43 (FUN-SOC), and PID2021-122980OB-C51,52 (ECLIPSE), and by the “Severo Ochoa” Programme for Centres of Excellence in R&D CEX2020-001039-S. A.G. and I.A. ackowledge support from CM (PEJD-2017-PREIND-4690 and PEJD-2019-POST/IND-15343) and JMD from MICINN (BES 2017-080617)Project
Gobierno de España. PCI2019-111867-2; Comunidad de Madrid. P2018/NMT-4321-NANOMAGCOST; Gobierno de España. RTI2018-097895-B-C42; Gobierno de España. RTI2018-097895-B-C43; Gobierno de España. PID2021-122980OB-C51; Gobierno de España. PID2021-122980OB-C52; Gobierno de España. CEX2020-001039-SEditor's Version
https://doi.org/10.1021/acsami.2c22205Subjects
Atomic Layer Deposition; Ferroelectric Hafnia; Spin−Orbit Devices; Nonvolatile Devices; Perpendicular Magnetic Anisotropy; FísicaNote
“This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To acces final work see “Toward nonvolatile spin-orbit devices: deposition of ferroelectric hafnia on monolayer graphene/Co/HM stacks”, ACS Applied Materials and Interfaces 15.13 (2023): 16963-16974, DOI: 10.1021/acsami.2c22205“Rights
© 2023 American Chemical SocietyAbstract
While technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tunable, nonvolatile memories through control of the interfacial spin-orbit driven interaction occurring at graphene/Co interfaces deposited on heavy metal supports. Here, the integration of ferroelectric Hf0.5Zr0.5O2 on graphene/Co/heavy metal epitaxial stacks is investigated via the implementation of several nucleation methods in atomic layer deposition. By employing in situ Al2O3 as a nucleation layer sandwiched between Hf0.5Zr0.5O2 and graphene, the Hf0.5Zr0.5O2 demonstrates a remanent polarization (2Pr) of 19.2 μC/cm2. Using an ex situ, naturally oxidized sputtered Ta layer for nucleation, we could control 2Pr via the interlayer thickness, reaching maximum values of 28 μC/cm2 with low coercive fields. Magnetic hysteresis measurements taken before and after atomic layer deposition show strong perpendicular magnetic anisotropy, with minimal deviations in the magnetization reversal pathways due to the Hf0.5Zr0.5O2 deposition process, thus pointing to a good preservation of the magnetic stack including single-layer graphene. X-ray diffraction measurements further confirm that the high-quality interfaces demonstrated in the stack remain unperturbed by the ferroelectric deposition and anneal. The proposed graphene-based ferroelectric/magnetic structures offer the strong advantages of ferroelectricity and ferromagnetism at room temperature, enabling the development of novel magneto-electric and nonvolatile in-memory spin-orbit logic architectures with low power switching
Files in this item
Google Scholar:Lancaster, Suzanne
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Arnay, Iciar
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Guerrero, Rubén
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Gudín, Adrian
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Guedeja-Marrón, Alejandra
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Diez, Jose Manuel
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Gärtner, Jan
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Anadón, Alberto
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Varela, Maria
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Camarero de Diego, Julio
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Mikolajick, Thomas
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Perna, Paolo
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Slesazeck, Stefan
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