Electron-beam-induced current at absorber back surfaces of Cu (In,Ga) Se2 thin-film solar cells

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dc.contributor.author Kavalakkatt, Jaison
dc.contributor.author Abou-Ras, Daniel
dc.contributor.author Haarstrich, J.
dc.contributor.author Ronning, Carsten
dc.contributor.author Nichterwitz, Melanie
dc.contributor.author Caballero, Raquel
dc.contributor.author Rissom, T.
dc.contributor.author Unold, Thomas
dc.contributor.author Scheer, Roland
dc.contributor.author Schock, Hans Werner
dc.contributor.other UAM. Departamento de Física Aplicada es_ES
dc.date.accessioned 2014-10-06T11:50:31Z
dc.date.available 2014-10-06T11:50:31Z
dc.date.issued 2014-01-07
dc.identifier.citation Journal of Applied Physics 115.1 (2014): 014504 en_US
dc.identifier.issn 0021-8979 (print) es_ES
dc.identifier.issn 1089-7550 (online) es_ES
dc.identifier.uri http://hdl.handle.net/10486/662069
dc.description The following article appeared in Journal of Applied Physics 115.1 (2014): 014504 and may be found at http://scitation.aip.org/content/aip/journal/jap/115/1/10.1063/1.4858393 en_US
dc.description.abstract The present work reports on investigations of the influence of the microstructure on electronic properties of Cu(In,Ga)Se2 (CIGSe) thin-film solar cells. For this purpose, ZnO/CdS/CIGSe stacks of these solar cells were lifted off the Mo-coated glass substrates. The exposed CIGSe backsides of these stacks were investigated by means of electron-beam-induced current (EBIC) and cathodoluminescence (CL) measurements as well as by electron backscattered diffraction (EBSD). EBIC and CL profiles across grain boundaries (GBs), which were identified by EBSD, do not show any significant changes at Σ3 GBs. Across non-Σ3 GBs, on the other hand, the CL signals exhibit local minima with varying peak values, while by means of EBIC, decreased and also increased short-circuit current values are measured. Overall, EBIC and CL signals change across non-Σ3 GBs always differently. This complex situation was found in various CIGSe thin films with different [Ga]/([In]+[Ga]) and [Cu]/([In]+[Ga]) ratios. A part of the EBIC profiles exhibiting reduced signals across non-Σ3 GBs can be approximated by a simple model based on diffusion of generated charge carriers to the GBs. en_US
dc.description.sponsorship This work was supported in part by the BMU projects comCIGS and comCIGSII. R.C. acknowledges financial support from Spanish MINECO within the program Ramon y Cajal (RYC-2011-08521). en_US
dc.format.extent 10 pag. es_ES
dc.format.mimetype application/pdf en
dc.language.iso eng en
dc.publisher American Institute of Physics. en_US
dc.relation.ispartof Journal of Applied Physics en_US
dc.rights © 2014 AIP Publishing LLC. en_US
dc.subject.other Cathodoluminescence en_US
dc.subject.other Solar cells en_US
dc.subject.other Carrier generation en_US
dc.subject.other Band gap en_US
dc.subject.other Charge carrires en_US
dc.title Electron-beam-induced current at absorber back surfaces of Cu (In,Ga) Se2 thin-film solar cells en_US
dc.type article en
dc.subject.eciencia Física es_ES
dc.relation.publisherversion http://dx.doi.org/10.1063/1.4858393 es_ES
dc.identifier.doi 10.1063/1.4858393 es_ES
dc.identifier.publicationfirstpage 014504 es_ES
dc.identifier.publicationissue 1 es_ES
dc.identifier.publicationlastpage undefined es_ES
dc.identifier.publicationvolume 115 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.rights.accessRights openAccess en
dc.authorUAM Caballero Mesa, Ana Raquel (264645)

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